Xenon behavior in TiN: A coupled XAS/TEM study

Bès, René; Gaillard, C.; Millard-Pinard, N.; Gavarini, S.; Martin, Philippe; Cardinal, S.; Esnouf, C.; Malchère, Annie; Perrat-Mabilon, A.

doi:10.1016/j.jnucmat.2012.10.046

Cited by 17 publications

(6 citation statements)

References 25 publications

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“…Extensive experimental studies [40][41][42][43] were performed on the thermal behavior of implanted Xe in sintered TiN. The Xe diffusion coefficient and transport velocity towards the surface under annealing at high temperature (between 1573 to 1873 K) have been measured.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of rare gas incorporation in titanium nitride

et al. 2013

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First-principles calculations have been carried out to study the incorporation of rare gas atoms, with a focus on xenon, in titanium nitride. The density functional theory-generalized gradient approximation method has been used to calculate the formation energy of several point defects (vacancies, interstitials, divacancies, Frenkel pairs) and then the incorporation energies of rare gases in these defects. The main results show that nitrogen vacancies are the most probable defects as well as the Schottky defects. Incorporation energy calculations suggest that the most favorable Xe host sites involve vacancies as the Schottky defect with vacancies located on the edge of the cubic lattice.

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Section: Introductionmentioning

confidence: 99%

First-principles study of rare gas incorporation in titanium nitride

et al. 2013

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“…To our knowledge Xe behaviour in CrN is not examined experimentally. But, a few studies have been carried out on other transition metal-nitrides, such as TiN, influenced by Xe ions irradiation [23][24][25]. The authors in these reports found that the Xe ions produce a great damage in this kind of systems.…”

Section: Xe Distribution In Crn Filmsmentioning

confidence: 99%

“…Among them chromium nitride (CrN) has attractive combination of desirable physical, chemical and mechanical characteristics [1]. These remarkable characteristics such as high hardness (22)(23)(24)(25), high wear-and corrosion resistance, low friction coefficient make it attractive for cutting tools and wear application, as diffusion barriers in the field of nano-electronics, and as corrosion and abrasion-resistant coatings on optical and mechanical components [2][3][4]. On the other hand, the CrN is also interesting due to its magnetic, optical and electronic properties, after being reported as a semiconductor material in the recent studies [5].…”

Section: Introductionmentioning

confidence: 99%

Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films

Popović¹,

Novaković²,

Zhang

et al. 2018

PAC

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Polycrystalline CrN thin films were irradiated with Xe ions. The irradiation-induced modifications on structural and optical properties of the films were investigated. The CrN films were deposited on Si(100) wafers with the thickness of 280 nm, by using DC reactive sputtering. After deposition, the films were implanted at room temperature with 400 keV Xe ions with the fluences of 5-20×10 15 ions/cm 2. The films were then annealed at 700°C in vacuum for 2 h. The combination of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) was used for structural analyses, while changes in optical properties were monitored by spectroscopic ellipsometry. We also measured the electrical resistivity of the samples using a four point probe method. RBS analysis reveals that the concentration of Xe in the layers increases with ion fluence reaching the value of around 1.5 at.% for the highest ion dose, at a depth of 73 nm. XRD patterns show that the irradiation results in the decrease of the lattice constant in the range of 0.4160-0.4124 nm. Irradiation also results in the splitting of 200 line indicating the tetragonal distortion of CrN lattice. TEM studies demonstrate that after irradiation the columnar microstructure is partially destroyed within ∼90 nm, introducing a large amount of damage in the CrN layers. Spectroscopic ellipsometry analysis shows that the optical band gap of CrN progressively reduces from 3.47 eV to 2.51 eV with the rise in ion fluence up to 20×10 15 ions/cm 2. Four point probe measurements of the films indicated that as the Xe ion fluence increases, the electrical resistivity rises from 770 to 1607 µΩcm. After post-implantation annealing crystalline grains become larger and lattice distortion disappears, which influences optical band gap values and electrical resistivity of CrN.

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“…Under these severe conditions, TiN has to still act as a diffusion barrier to fission products. Very limited information is available on the effect of ion irradiation in TiN and the migration behavior of different fission products [22,23,24,25]. For TiN to be used as matrix material of GFRs, the influence of irradiation in the migration behavior of important fission products need to be understood.…”

Section: Introductionmentioning

confidence: 99%

“…Xenon is one of the abundant fission products [24]. Due to the importance of Xe, the migration behavior in TiN has been investigated [13,24,25]. However, the influence of irradiation in the migration behavior of Xe in TiN has not been reported.…”

Section: Introductionmentioning

confidence: 99%