XPS and SIMS depth profiling of chlorine in high‐temperature oxynitrides

Abstract

Thin oxides deposited by low-pressure chemical vapour deposition (LPCVD) at high temperature are being widely investigated in VLSI technology to be used as possible substitutes for the usual thermal oxides. High-temperature oxide deposition involves reactions between N 2 O and dichlorosilane or silane. Considering possible active dielectric applications, the effect of further nitridation and annealing of deposited films has to be considered. Evaluation of the nitrogen content and the distribution profile of these dielectrics then becomes a relevant analytical issue. Moreover, it is also crucial to monitor the amount of possible contaminant species, such as chlorine, introduced by the precursor gases during the deposition. In this work we present the development of an analytical methodology for quantitative depth profiling of chlorine in thin oxides using SIMS and XPS. In addition, the evolution of chlorine distribution in an appropriate set of high-temperature oxide films submitted to nitridation and further thermal processes will be shown.