YBa2Cu3O7 films epitaxially grown on MgO, LaAlO3, SrLaAlO4 and Al2O3 substrates structural and superconducting properties in correlation with the microwave surface resistance and the far-infrared transmittance

Paven-Thivet, Claire Le; Guilloux-Viry, M.; Padiou, J.; Перрин, А.; Sergent, M.; Vaulchier, L. A. de; Bontemps, N.

doi:10.1016/0921-4534(95)00070-4

Cited by 26 publications

(11 citation statements)

References 22 publications

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“…There is no noticeable correlation excepted the appearance of a threshold value, and indeed, the films having very low Τ, exhibit high RS [16,19]. However, the same plot for optimized samples exhibits only a randomly spread cloud of points.…”

Section: Rs and Physical Propertiesmentioning

confidence: 95%

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Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

1997

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Tle graphoepitaxial growth of c-axis YΒa2Cu3O7 laser ablated thin films on (100)MgO induces a competition between two main in-plane orientations due to the large lattice mismatch: (100) YΒa2Cu3O7 || (100) MgO, c10 notation or (I 10) YΒa2 Cu3O7 || (100) MgO, c145 notation. The ratio of c┴45 /c┴0 in-plane orientations (η), measured by X-ray diffraction φ scans, is ranging from 0.2% to 49.7% for the films reported here. Their crystalline qualities were compared on the basis of rocking curves (Δθ), electron channelinng patterns and reflection high energy electron diffraction diagrams. The coexistence of c┴ 0 a n d G 1 4 5 d o m a i n s c r e a t e s h i g h a n g l e g r a i n b o u n d a r i e s . N o degradation of Τc , residual resistance ratio (RRR) or ΔTc is observed when η increases. In contrast, a strong correlation between microwave losses characterized by surface resistance (Rs at 10 GHz and 77 K), inductive losses S(χ") (surface of the χ" peak obtained in a.c. susccptibility at 119 Hz) and η was clearly evidenced. A minimum of losses was found for η between 3 and 6% suggesting the necessity of a low quantity of high angle grain boundaries for films optimization. Finally, some specific processes carried out recently in order to try to efficiently control η, then Rs are discussed.PACS numbers: 68.55. Jk, 73.25.+i 1. Introduction The control of the growtl of ligl quality epitaxial thin fllms of HTSC materials opens the way to a number of applications, specially in the field of microwave devices. however, working at high frequencies implies additional requirements on the dielectric properties of the substrates and, in this aspect, (100)MgO single crystal is one of the most popular. Unfortnnately, this material presents an important misfit with HTSC, meaning severe limitations in the mechanism of heteroepitaxial growth. In this paper, we will focus on the growth of YΒa2Cu3O7 (YBCO) on (100)MgO using pulsed laser deposition, thc specific defects of such films and their implication on the surface resistance RS wlich is the pertinent parameter for any microwave applications.

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Section: Rs and Physical Propertiesmentioning

confidence: 95%

“…Figure 4 reports RS as a function of n for a number of YBCO films c-axis grown on (100)MgO substrates. The value of n is limited to 50% for symmetrization (and indeed 100% pure c1 0 and c145 fllms exhibit similar RS values [16]). …”

Section: Rs and Microstructure: Hagb Densitymentioning

confidence: 99%

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

1997

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“…After irradiation, the resistive transition of sample MB is lowered by 1.9 K and slightly broadened (0.6 K). Sample LR was grown by laser ablation according to the method explained in [50,51]. It has a narrow transition (0.8 K), its critical temperature is lower than the one obtained in samples grown on LaAlO 3 as usually observed for films grown on MgO.…”

Section: Samplesmentioning

confidence: 99%

“…The narrow rocking curve (∆θ = 0.23 • ) is indicative of a good c-axis orientation. Films grown on MgO often display simultaneous in-plane epitaxial growth along the [100] and [110] directions, which is very detrimental to surface resistance hence, as was shown earlier, to the penetration depth [50]. This specific sample was selected for its weak admixture of [110] grains (5%), giving rise to R S (10 GHz, 77 K) ≃ 2 mΩ, deduced from the experimental correlation between low frequency and microwave frequency losses [51].…”

Section: Samplesmentioning

confidence: 99%

Low temperature penetration depth and the effect of quasi-particle scattering measured by millimeter wave transmission in YBa Cu O thin films

Djordjevic¹,

Vaulchier²,

Bontemps³

et al. 1998

Eur. Phys. J. B

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Abstract. Measurement of the penetration depth λ(T ) as a function of temperature using millimeter wave transmission in the range 130-500 GHz are reported for three YBa2Cu3O 7−δ (YBCO) laser ablated thin films. Two films, deposited on a LaAlO3 substrate (Tc = 90.2 K), exhibit a narrow resistive transition (0.3 K). One has been subsequently irradiated with He + ions in order to increase the scattering rate of the quasi-particles (Tc = 87.8 K). The third film, grown on MgO (Tc = 88.5 K), exhibits also a fairly narrow transition (0.8 K) and a high crystalline quality. The experiment provides the absolute value λ(T ≤ 30 K) for the penetration depth at low temperature: the derivation from the transmission data and the experimental uncertainty are discussed. We find a zero temperature penetration depthλ0 = 1990 ± 200Å, 2180 ± 200Å and 2180 ± 200Å, for YBCO-500Å/LaAlO3 (pristine), YBCO-1300Å/MgO and YBCO-500Å/LaAlO3 (irradiated) respectively. λ(T ≤ 30 K) exhibits a different behavior for the three films. In the pristine sample, λ(T ≤ 30 K) shows a clear temperature and frequency dependence, namely the temperature dependence is consistent with a linear variation, whose slope decreases with frequency: this is considered as an evidence for the scattering rate being of the order of the measuring frequency. A two fluids analysis yields 1/τ (T ≤ 30 K) ∼ 1.7 × 10 12 s −1 . In the two other samples, λ(T ≤ 30 K) does not display any frequency dependence, suggesting a significantly larger scattering rate. The temperature dependence is different in these latter samples. It is consistent with a linear variation for the YBCO/MgO sample, not for the YBCO/LaAlO3 irradiated one, which exhibits a T 2 dependence up to 40 K. We have compared our data to the predictions of the d-wave model incorporating resonant scattering and we do not find a satisfactory agreement. However, the large value ofλ0 in the pristine sample is a puzzle and sheds some doubt on a straightforward comparison with the theory of data from thin films, considered as dirty d-wave superconductors.

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“…SrLaΑ1O4 (SLA), which belongs to the oxides that crystallise in the tetragonal [K2 N iF4] structure, has attracted attention for its use as a substrate in the epitaxial growth of high-Τc superconducting films such as Y-Ba-Cu-O [1][2][3][4], Bi-Sr-Ca-Cu-O [2], and La-Sr-Cu-O [5]. For application, substrate crystals with good crystallographic perfection are favourable.…”

Section: Introductionmentioning

confidence: 99%

Origin of Imperfections in ⟨100⟩ SrLaAlO₄Crystals

1997

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In Czochralski-grown SrLaΑIO 4 crystals with (100) orientation, (001) planar faults extending through the entire crystal boule can frequently be observed. Chemical etching and transmission electron microscopy including energy dispersive X-ray spectroscopy were used to characterise their nucleation sites, these being located iu the upper part of the crystal cone. Three serious sources were found: (1) lateral {001) facets, (2) grown-in defects in the seed, and (3) small particles of a second phase in the interior of the cone. These particles were identifled as trígonal and cubic form of lanthanum oxide with a different Sr content.

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YBa2Cu3O7 films epitaxially grown on MgO, LaAlO3, SrLaAlO4 and Al2O3 substrates structural and superconducting properties in correlation with the microwave surface resistance and the far-infrared transmittance

Cited by 26 publications

References 22 publications

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Low temperature penetration depth and the effect of quasi-particle scattering measured by millimeter wave transmission in YBa Cu O thin films

Origin of Imperfections in ⟨100⟩ SrLaAlO₄Crystals

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YBa2Cu3O7 films epitaxially grown on MgO, LaAlO3, SrLaAlO4 and Al2O3 substrates structural and superconducting properties in correlation with the microwave surface resistance and the far-infrared transmittance

Cited by 26 publications

References 22 publications

Growth of Laser Ablated YBa2Cu3O7Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Growth of Laser Ablated YBa2Cu3O7Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Low temperature penetration depth and the effect of quasi-particle scattering measured by millimeter wave transmission in YBa Cu O thin films

Origin of Imperfections in ⟨100⟩ SrLaAlO4Crystals

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Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Origin of Imperfections in ⟨100⟩ SrLaAlO₄Crystals