YBa2Cu3O7 on sputter deposited YSZ buffered Si (100)

Brown, P.; Khan, Taj Muhammad; Vlasov, Yu. A.; Batista, Pedro Henrique da Silva; León, Franco; Dixon, David G.; Larkins, G.L.; Stampe, P. A.; Kennedy, R. J.

doi:10.1016/s0921-4534(00)01291-0

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…The layer formed was approximately 15 nm thick and highly oriented with a small amount of in-plane randomness according to the x-ray diffraction data. Exact processing details are discussed in [5], [6].…”

Section: B Fabrication and Processingmentioning

confidence: 99%

“…Historically there has been considerable interest in the use of silicon as a substrate material for high temperature superconductors [1]- [8]. Some of this interest has been motivated by the desire to produce integrated high T C superconductor -semiconductor structures [4], [5]. Other works have cited a desire to use silicon substrates (notably Si on sapphire) for microwave applications [6].…”

Section: Introductionmentioning

confidence: 99%

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Superconducting half-wave microwave resonator on YSZ buffered Si [100]

Vargas

Brown²,

Khan³

et al. 2001

IEEE Trans. Appl. Supercond.

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We have produced high quality superconducting half-wave microwave resonators on YBCO/YSZ/Si heterostructures. The YSZ was grown on (100) Si by pulsed dc magnetron sputtering at 820°C in 37 mTorr Ar/O 2. YBCO was then deposited on the YSZ/Si by pulsed laser ablation at 760°C in 0.5 Torr of O 2. A coplanar meander-line structure was patterned and its microwave characteristics measured. The results indicate Si to be a definite candidate for microwave applications producing Q values exceeding 50,000 at 4 GHz for T < 30 K. The microwave properties compare favorably to those obtained from identical resonators patterned on normal metal and YBCO/LaAlO 3 at 30 K.

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Section: B Fabrication and Processingmentioning

confidence: 99%