Yellow phosphors doping with Gd3 + , Tb3 +  and Lu3 +  in MTiO3 (M = Mg and Sr) luminescence properties

Abstract

This paper reports Gd 3+ , Tb 3+ and Lu 3+ doped MTiO 3 (M = Mg and Sr)-based phosphors which were synthesized by the conventional solid-state reaction method, their crystal structures and luminescence properties were investigated. X-ray diffraction patterns (XRD) showed that phosphors sintered at 1000 • C for 2 h were the pure SrTiO 3 and MgTiO 3 phases. The optimization of reaction conditions was carried out by thermogravimetry and differential thermal analysis (DTA/TG) methods. Surface and elemental analyses were performed by using SEM instrument. The excitation and emission spectra were recorded by a photoluminescence spectrophotometer (PL). The thermoluminescence (TL) properties of MgTiO 3 :RE (RE = Gd 3+ , Tb 3+ , Lu 3+) and SrTiO 3 :RE (RE = Gd 3+ , Tb 3+ , Lu 3+) were investigated.

Luminescence Performance of Yellow Phosphor SrxBa1−xTiO3: Eu3+, Gd3+ for Blue Chip

“…With Ba 2+ ions being incorporated, the outermost d-orbital is affected by the crystal field greatly; when Ba 2+ incorporation amount exceeds a certain limit, the performance of the spectral emission is Journal of Nanomaterials 5 intensely reduced. When the proportion of Sr 2+ and Ba 2+ is 4 : 1 the luminous intensity increased, from which we can see that a certain amount of Ba 2+ is contributed to the intensity of light emission [31,32].…”

A large red-shift in the photoluminescence emission of Mg 1−x Sr x TiO 3

“…A considerable effort has been made recently to understand the intrinsic and visible emissions in MTO [7,14,15], and this knowledge plays a key role in streamlining the physical properties of the system. In particular, the photoluminescence (PL) properties are an important quantum optical phenomenon and are one of the most powerful methods for studying the order-disorder effects in semiconductors [8,9].…”

“…In particular, the photoluminescence (PL) properties are an important quantum optical phenomenon and are one of the most powerful methods for studying the order-disorder effects in semiconductors [8,9]. The doping process in semiconductors often causes significant alterations in the structural and electronic properties of these materials, and is the most promising strategy to further enhance their properties and applications in materials science [5,6,[15][16][17]. However, few studies have been reported on near-infrared (NIR) emissions for such particles [14].…”