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Mil’vidskiĭ, M. G.; Enisherlova, K. L.; Reznick, V.J.; Rusak, T. F.; Chervyakova, E.N.

doi:10.1023/a:1008691412799

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…It has been found that two types of bubble arise in the wafer bonding [17]. The first type is formed at the low temperature due to dust particles, local poor hydroxylation resulting from chemical contamination and local non-flatness of the bonding surfaces.…”

Section: Effect Of Annealingmentioning

confidence: 99%

Effect of medium vacuum on low temperature wafer bonding

Tan

Wei

et al. 2005

J. Micromech. Microeng.

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Direct wafer bonding was performed under medium vacuum conditions. The effects of the sequence of wafer contact and vacuum application, annealing temperature, and annealing time on the bonding quality and bonding speed were investigated. From the comparison of the bonding efficiency, contacting two wafers in air rather than in vacuum produces much less bubbles. For vacuum bonding, good bonding, such as high bonding strength and high bonding efficiency, can be achieved at temperatures as low as 300 • C. From the comparison between air wafer bonding and medium vacuum wafer bonding, it is obvious that medium vacuum annealing can improve the bonding strength and accelerate the bonding process. Based on the results observed, a qualitative mechanism of medium vacuum wafer bonding at low temperatures was proposed.

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Section: Effect Of Annealingmentioning

confidence: 99%

Effect of medium vacuum on low temperature wafer bonding

Tan

Wei

et al. 2005

J. Micromech. Microeng.

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“…However, this method cannot be implemented quite often because of either a low solubility of suitable impurities in the semiconductor matrix at a high concentration of electrically active intrinsic defects or the absence of such impurities at all. This circumstance provoked the development of an alternative approach (see, e.g., work [1]), which is based on the formation of nano-sized inclusions with required properties in the semiconductor crystal matrix. Small dimensions of those inclusions give rise to a confinement of the electron wave function by a potential barrier, which results in the formation of a discrete electron spectrum quite similar with that induced by impurities.…”

Section: Introductionmentioning

confidence: 99%

Hall-Effect Study of Disordered Regions in Proton-Irradiated n-Si Crystals

et al. 2013

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The nature and dimensions of disordered regions emerged in n-Si single crystals irradiated with high-energy (25 MeV) protons have been studied by carrying out Hall measurements of their electrophysical parameters. Specimens fabricated with the use of the zone-melting technique and doped with phosphorus to a concentration of 6×10 13 cm −3 are investigated. Irradiation was carried out at room temperature to exposure doses of (1.8÷8.1)×10 12 cm −2 . Depending on the irradiation dose and the temperature of isochronous annealing, some specimens irradiated with high-energy protons revealed a drastic increase of the effective Hall mobility µ eff , which is explained by the emergence of "metallic" inclusions in them, i.e. regions with the conductivity considerably higher in comparison with that of the semiconductor matrix. The radius of those regions was estimated to be Rm < 80 nm. An assumption was made that the "metallic" inclusions are nano-sized atomic clusters. K e y w o r d s: disordered regions, proton irradiation, effective Hall mobility, silicon.

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Semiconductor materials for present-day solid-state electronics

Mil’vidskiĭ¹,

Ufimtsev²

2000

Inorg Mater

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Untitled

Cited by 5 publications

References 21 publications

Effect of medium vacuum on low temperature wafer bonding

Effect of medium vacuum on low temperature wafer bonding

Hall-Effect Study of Disordered Regions in Proton-Irradiated n-Si Crystals

Semiconductor materials for present-day solid-state electronics

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