Young's modulus of anodic oxide layers formed on aluminum in sulphuric acid bath

Bensalah, W.; DePetris-Wery, M.; Ayedi, H.F.

doi:10.1016/j.matlet.2016.05.035

Cited by 8 publications

(1 citation statement)

References 13 publications

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“…We used a four-variables Doehlert Design of Experiment (DOE) [8] to determine a relationship between etching parameters and the lateral etch rate minimizing the number of experiments. This kind of DOE is widely used for multivariate optimization of different processes and technologies [9][10][11]. In this study, the parameters were optimized to obtain a high lateral etch rate.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

et al. 2021

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In this work, the effects of the N2 addition to the SF6 plasma used in the isotropic silicon etching of Microelectromechanical systems (MEMS) with Au components are investigated. A four-variables Doehlert design was implemented for optimizing the etching parameters (power, pressure, gas flow rate, and N2/SF6 ratio) to maximize the lateral etch rate of Si using SF6/N2 gas mixture. The optimized etch condition founded for a lateral etch rate of 1.8 µm/min was: power=143 W, chamber pressure=86 mTorr, flow rate=22 sccm, and N2/SF6 ratio=0.1. Furthermore, it was demonstrated that the established etching process avoids the structure damage of Au components.

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