Zinc Diffusion In GaSb For Thermophotovoltaic Cell Applications

Simcock, M.N.

doi:10.1063/1.1841907

AIP Conference Proceedings

2004

DOI: 10.1063/1.1841907

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Zinc Diffusion In GaSb For Thermophotovoltaic Cell Applications

M.N. Simcock¹

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2010

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“…Recently, many researchers studied the zinc diffusion process in GaSb through experiments and theoretical analyses [1][2][3][4][5][6][7][8][9][10][11]. Sulima and Bett [1-3] analyzed the factors such as the diffusion temperature and time, the surface preparation of GaSb wafers, and adding some Sb pellets into the diffusion sources (zinc pellets) which influenced the zinc concentration profiles.…”

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Experimental and theoretical investigation of zinc diffusion in N-GaSb

Tang

2010

Chin. Sci. Bull.

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Zinc diffusion process in N-GaSb was studied with excessive, appropriate and insufficient quantity of diffusion source (zinc pellets). Kink-and-tail type zinc concentration profiles obtained with appropriate zinc pellets quantity were successfully simulated using the assumption that the vacancy mechanism mediated by V 0 Ga and kick-out mechanism mediated by I + Ga take effect at the same time. It is found out that for diffusion temperature from 460°C to 500°C, the zinc surface concentration of the diffused samples has nearly no change and the logarithmic value of the zinc surface diffusion coefficient is linear with the reciprocal value of diffusion temperature; when the diffusion temperature is constant, both the zinc surface concentration and diffusion coefficient do not change with diffusion time. GaSb, zinc diffusion, kink-and-tail profile, diffusion mediated by multiple defects

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mentioning

confidence: 99%

Experimental and theoretical investigation of zinc diffusion in N-GaSb

Tang

2010

Chin. Sci. Bull.

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Zinc Diffusion In GaSb For Thermophotovoltaic Cell Applications

Cited by 1 publication

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Experimental and theoretical investigation of zinc diffusion in N-GaSb

Experimental and theoretical investigation of zinc diffusion in N-GaSb

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