Zinc-oxide-based planar nanodiodes operating at 50 MHz

Irshaid, Mustafa Y.; Balocco, Claudio; Luo, Yi; Bao, Peng; Brox-Nilsen, C.; Song, Aimin

doi:10.1063/1.3629995

Cited by 28 publications

(10 citation statements)

References 21 publications

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“…First demonstrated in InGaAs, 4 the SSD has since then been reported as a roomtemperature detector up to 1.5 THz in GaAs. 5 SSD detection has also been published for indium-tin oxide, 6 ZnO, 7 and recently GaN, 8 among other materials. Since InAs exhibits an electron mobility superior to all materials reported so far, higher operation frequency may be expected in an InAsbased SSD.…”

mentioning

confidence: 99%

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Westlund

Sangare

Ducournau

et al. 2013

Applied Physics Letters

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RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range of 2-315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/Hz 1 =2 was observed for the SSD when driven by a 50 X source. With a conjugately matched source, a responsivity of 34 V/W and an NEP of 65 pW/Hz 1 =2 were estimated. An antenna-coupled SSD demonstrated a responsivity of 0.7 V/W at 600 GHz. The results demonstrate the feasibility of zero-bias terahertz detection with high-electron mobility InAs SSDs up to and beyond 100 GHz. V

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confidence: 99%

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Westlund

Sangare

Ducournau

et al. 2013

Applied Physics Letters

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“…The nanochannel is closed and the device is in the “off” state. For an n‐type semiconductor, the opposite voltages have to be applied and the charge carriers are electrons . This self‐switching mechanism leads to a diode‐like electrical behavior.…”

Section: Methodsmentioning

confidence: 99%

20 megahertz operation of organic nanodiodes

Majewski¹,

Song²

2016

Phys. Status Solidi B

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Solution-processed polymer nanodiodes operating at frequencies up to 20 MHz are demonstrated. As the active layer, p-type semiconductor poly(didodecylquarterthiophene) (PQT12) was used. It is shown that devices based on linear arrays of semiconducting polymer nanowires with intentionally broken symmetry display nonlinear current-voltage characteristics similar to conventional diodes. The so-called self-switching devices (SSDs) are single layered, planar structures that can be easily fabricated in a single step of nanolithography. The SSDs possess substantially lower parasitic capacitance between contacts than conventional organic diodes and organic thin-film transistors, and we show that the nano-rectifiers can operate at frequencies well above both 125/134 kHz and 13.56 MHz RFID communication bands.

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“…The SSD device has been demonstrated using heterostructures where the 2DEG is presented such as systems based on InAlAs/InGaAs and AlGaAs/GaAs multilayer structures [21,22]. The working principle of the device is not dependent on the 2DEG properties, allowing to be fabricated in bulk materials like silicon [23] and transparent semiconductors like ZnO and indium tin oxide (ITO) [24,25], and graphene-based SSD has been also demonstrated [26]. Those devices have exhibited the ability to detect extremely weak signals without applied bias [27,28]; their high sensitivity [29] and their capability to operate in the terahertz regime [27,30] make the SSD concept a rewarding tool that has opened a broad range of applications that support the THz gap filling.…”

Section: The Self-switching Diodementioning

confidence: 99%

Semiconductor Surface State Engineering for THz Nanodevices

Cortes-Mestizo¹,

Briones²,

Espinosa-Vega³

et al. 2020

Electromagnetic Materials and Devices

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This chapter is dedicated to study the semiconductor surface states, which combined with nanolithography techniques could result on remarkable properties of advanced nanodevices suitable for terahertz (THz) signal detection or harvesting. The author presents the use of low-dimensional semiconductor heterostructures for the development of the so-called self-switching diodes (SSDs), studying by simulation tool key parameters in detail such as the shape and size of the two-dimensional electron gas system. The impact of the geometry on the working principle of the nanodevice and the effects on current-voltage behavior will be described in order to acquire design guidelines that may improve the performance of the self-switching diodes when applied to low-power square-law rectifiers as well as elements in rectennas by appropriately setting the size of the components.

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Zinc-oxide-based planar nanodiodes operating at 50 MHz

Cited by 28 publications

References 21 publications

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

20 megahertz operation of organic nanodiodes

Semiconductor Surface State Engineering for THz Nanodevices

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