Metal Oxide Nanoparticles 2021
DOI: 10.1002/9781119436782.ch23
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Zinc Oxide Nanoparticles for Varistors

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Cited by 5 publications
(8 citation statements)
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“…Until now, most groups have focused on the materials’ ferroelectric response to explain the changes observed in charge separation and photocatalytic activities of BTO‐based photocatalysts. [ 6–8 ] However, the additional influence of point defects, found within most metal oxide nanoparticles, [ 9 ] on the BTO photochemical activity is still lacking. In particular, the creation of point defects under specific synthesis conditions that can act as charge recombination centers has been mostly ignored with these materials systems.…”
Section: Introductionmentioning
confidence: 99%
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“…Until now, most groups have focused on the materials’ ferroelectric response to explain the changes observed in charge separation and photocatalytic activities of BTO‐based photocatalysts. [ 6–8 ] However, the additional influence of point defects, found within most metal oxide nanoparticles, [ 9 ] on the BTO photochemical activity is still lacking. In particular, the creation of point defects under specific synthesis conditions that can act as charge recombination centers has been mostly ignored with these materials systems.…”
Section: Introductionmentioning
confidence: 99%
“…
However, the additional influence of point defects, found within most metal oxide nanoparticles, [9] on the BTO photochemical activity is still lacking. In particular, the creation of point defects under specific synthesis conditions that can act as charge recombination centers has been mostly ignored with these materials systems.Our work intends to fill this gap by studying the influence of ferroelectric effects and point defects on charge separation within various BTO nanoparticles.
…”
mentioning
confidence: 99%
“…The significant regions of the I–V curves of MOVs are as follows: (i) the prebreakdown or leakage region (I < 10 μA), (ii) the nonlinear region or normal varistor operation (10 μA < I < 1 kA), and (iii) the upturn region (I > 1 kA) [ 51 , 52 ]. At low currents, MOVs can reach very high resistance (≤10 GΩ) in the leakage region, which varies with temperature and frequency.…”
Section: Introductionmentioning
confidence: 99%
“…Normal varistor operation begins at a threshold or breakdown voltage (V B ) at a current of 1 mA, denoted as V 1mA , when α can reach a maximum value [ 52 , 53 , 55 ]. An α value greater than 30 suggests good contact between ZnO grains [ 53 ], while an α value less than 10 indicates poor boundary junctions between ZnO grains, resulting in unsatisfactory electrical (E–J) characteristics of MOVs [ 53 , 56 ].…”
Section: Introductionmentioning
confidence: 99%
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