ZnO nanorod‐based Love wave delay line for high mass sensitivity: a finite element analysis

Trivedi, Shyam; Nemade, Harshal B.

doi:10.1049/iet-smt.2018.5239

IET Science, Measurement & Technology

2019

DOI: 10.1049/iet-smt.2018.5239

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ZnO nanorod‐based Love wave delay line for high mass sensitivity: a finite element analysis

Shyam Trivedi

Harshal B. Nemade

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2024

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Cited by 1 publication

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Ab Initio Modelling of g-ZnO Deposition on the Si (111) Surface

Alzhanova,

Mastrikov,

Yerezhep

2024

J. Compos. Sci.

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Recent studies show that zinc oxide (ZnO) nanostructures have promising potential as an absorbing material. In order to improve the optoelectronic properties of the initial system, this paper considers the process of adsorbing multilayer graphene-like ZnO onto a Si (111) surface. The density of electron states for two- and three-layer graphene-like zinc oxide on the Si (111) surface was obtained using the Vienna ab-initio simulation package by the DFT method. A computer model of graphene-like Zinc oxide on a Si (111)-surface was created using the DFT+U approach. One-, two- and three-plane-thick graphene-zinc oxide were deposited on the substrate. An isolated cluster of Zn3O3 was also considered. The compatibility of g-ZnO with the S (100) substrate was tested, and the energetics of deposition were calculated. This study demonstrates that, regardless of the possible configuration of the adsorbing layers, the Si/ZnO structure remains stable at the interface. Calculations indicate that, in combination with lower formation energies, wurtzite-type structures turn out to be more stable and, compared to sphalerite-type structures, wurtzite-type structures form longer interlayers and shorter interplanar distances. It has been shown that during the deposition of the third layer, the growth of a wurtzite-type structure becomes exothermic. Thus, these findings suggest a predictable relationship between the application method and the number of layers, implying that the synthesis process can be modified. Consequently, we believe that such interfaces can be obtained through experimental synthesis.

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Ab Initio Modelling of g-ZnO Deposition on the Si (111) Surface

Alzhanova,

Mastrikov,

Yerezhep

2024

J. Compos. Sci.

View full text Add to dashboard Cite

show abstract

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ZnO nanorod‐based Love wave delay line for high mass sensitivity: a finite element analysis

Cited by 1 publication

References 61 publications

Ab Initio Modelling of g-ZnO Deposition on the Si (111) Surface

Ab Initio Modelling of g-ZnO Deposition on the Si (111) Surface

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