Высокочастотный резонансный магнитоэлектрический эффект в структуре FeCoSiB-AlN на диэлектрической подложке

Abstract

A high-frequency magnetoelectric (ME) effect has been discovered in a planar structure containing a ferromagnetic FeCoSiB layer and a piezoelectric AlN layer produced by magnetron sputtering on a borosilicate glass substrate. The structure was excited by a magnetic field at a frequency of the thickness acoustic vibration mode of 32.4 MHz, and the electric voltage generated by the piezoelectric layer was measured. The coefficient of ME conversion at the frequency of the second thickness mode is αE ≈ 19 V / A at a bias magnetic field of 120 A / m, corresponding to the maximum of the piezomagnetic coefficient of the ferromagnetic layer.