Note: The role of Peierls-like distortions in the modification of electronic bandgaps of graphene nanoribbons under uniaxial strain

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe 2 /MoS 2 heterojunction, where the VSe 2 monolayer acts as the ferromagnet with the room-temperature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The non-equilibrium study reveals a large tunneling magnetoresistance (TMR) of 846 % at 300 Kelvin, identifying significantly its parallel and anti-parallel states. Thanks to the strong spin Hall conductivity of MoS 2 , SOT is promising for the magnetization switching of VSe 2 free layer. arXiv:1904.07499v1 [cond-mat.mtrl-sci] 16 Apr 2019 Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe 2 /MoS 2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.