Abstruct-A new method for the evaluation of the dc base parasitic resistance, R,, of bipolar transistors is described. The method is based on impact-ionization-induced base current reversal and enables R , to be evaluated independently from the emitter parasitic resistance in a wide range of emitter current and collector-base voltage, without requiring any special device structure. The method can also extract R , in impact-ionization regime, where current crowding due to negative base current induces an increase in R , at increasing emitter current.

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The permanent degradation introduced in the main electrical parameters of a newly developed European optocoupler type is described, as a function of proton fluences and Co-60 total ionizing dose. Optoi's devices assembled in Leadless Chip Carrier packages, coded OIER10 are being developed in the framework of an ECI project for ESA, aimed at the ESCC evaluation of Optoi optocouplers. The first analyses of the recent irradiation results show a good behavior of the parts under proton and gamma irradiation.