Local electron triggered reactions of functional surface adsorbates were used as a maskless, dry, and minimally invasive nanolithography concept to stabilize the polarisation of individual vertical cavity surface emitting lasers (VCSELs) on a wafer in a post-processing step. Using a 30 keV focused electron beam of a scanning electron microscope and injecting volatile organo-metallic (CH(3))(2)Au(tfa) molecules, polarisation gratings were directly written on VCSELs by dissociating the surface adsorbed molecules. The electron triggered adsorbate dissociation resulted in electrically conductive Au-C nano-composite material, with gold nanocrystals embedded in a carbonaceous matrix. A resistivity of 2500 µΩcm was measured at a typical composition of 30 at.% Au. This material proved successful in suppressing polarisation switching when deposited as line gratings with a width of 200 nm, a thickness of 50 nm, and a pitch of 500 nm and 1 µm. Refractive index measurements suggest that the optical attenuation by the deposited Au-C material is much lower than by pure Au thus giving a low emission power penalty while keeping the polarisation stable.

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Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5µm. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize the combination of the threshold current, output power, and direct current modulation characteristics. The fabrication process is compatible with industrial production and should help in improving device yield and in reducing manufacturing costs.

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.