The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important 1 . While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers 2-4 and spintronic devices 5 . An electron spin in Si can represent a well-isolated quantum bit with long coherence times 6 because of the weak spin-orbit coupling 7 and the possibility to eliminate nuclear spins from the bulk crystal 8 . However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors 9 coupled to a metal-oxide-semiconductor single-electron transistor 10,11 -compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.The projective, single-shot readout of a qubit is a crucial step in both circuit-based and measurement-based quantum computers 12 . For electron spins in solid state, this has only been achieved in GaAs/AlGaAs quantum dots coupled to charge detectors 13-15 . The spin readout was achieved utilizing spin-dependent tunnelling, in which the electron was displaced to a different location depending on its spin state. The charge detector, electrostatically coupled to the electron site, sensed whether the charge had been displaced, thereby determining the spin state. Here we apply a novel approach to charge sensing, where the detector is not only electrostatically coupled, but also tunnel-coupled to the electron site 11 , as shown in Fig. 1a. As a charge detector we employ here the silicon single-electron transistor 10 (SET), a nonlinear nanoelectronic device consisting of a small island of electrons tunnel-coupled to source and drain reservoirs, electrostatically induced beneath an insulating SiO 2 layer. A current can flow from source to drain only when the electrochemical potential of the island assumes specific values 16 , resulting in a characteristic pattern of sharp current peaks as a function of gate voltage (Fig. 1e). The shift in electrochemical potential arising from the tunnelling of a single electron from a nearby charge centre into the SET island is large enough to switch the current from zero to its maximum value. This tunnelling event becomes spin-dependent in the presence of a large magnetic field, when the spin-up state | ↑ has a higher energy than the spin-down state | ↓ , by an amount larger than the thermal and electromagnetic broadening of electron states in the SET isla...

We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.