Homoepitaxial growth of high structural quality and high-purity thick gallium nitride layers by crystallization from vapor phase (hydride vapor phase epitaxy (HVPE)) on 1, 1.5, and 2 inch substrates obtained by a solution (ammonothermal) growth method is presented. Advantages and disadvantages of both growth technologies are described in detail. Structural, optical, electrical, and thermal properties of gallium nitride grown from the vapor phase are demonstrated and compared to properties of ammonothermally grown material. It is shown that a synergy of these two methods can create new opportunities for an efficient production of bulk gallium nitride crystals and then substrates. It is also shown that free-standing (products of slicing procedures) gallium nitride crystals obtained from growth by vapor phase on ammonothermal substrates can be successfully used as seeds for the next growth process by both discussed methods. Factors limiting HVPE and making it a 'wafer to wafer' technology are presented, clarified, and analyzed. Intentional introduction of silicon to growth of gallium nitride by HVPE and crystals with a high free carrier concentration and high structural quality are demonstrated. First electronic and optoelectronic devices fabricated on the free-standing gallium nitride substrates are shown.

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