Richard Gispert passed away few weeks after his return from the early mission to Trapani. Abstract. We present the first determination of the Galactic polarized emission at 353 GHz by Archeops. The data were taken during the Arctic night of February 7, 2002 after the balloon-borne instrument was launched by CNES from the Swedish Esrange base near Kiruna. In addition to the 143 GHz and 217 GHz frequency bands dedicated to CMB studies, Archeops had one 545 GHz and six 353 GHz bolometers mounted in three polarization-sensitive pairs that were used for Galactic foreground studies. We present maps of the I, Q, U Stokes parameters over 17% of the sky and with a 13 arcmin resolution at 353 GHz (850 µm). They show a significant Galactic large scale polarized emission coherent on the longitude ranges [100, 120] and [180, 200] deg. with a degree of polarization at the level of 4-5%, in agreement with expectations from starlight polarization measurements. Some regions in the Galactic plane (Gem OB1, Cassiopeia) show an even stronger degree of polarization in the range 10-20%. These findings provide strong evidence for a powerful grain alignment mechanism throughout the interstellar medium and a coherent magnetic field coplanar to the Galactic plane. This magnetic field pervades even some dense clouds. Extrapolated to high Galactic latitude, these results indicate that interstellar dust polarized emission is the major foreground for PLANCK-HFI CMB polarization measurements.

We present a study of the atomic and chemical structure of the surface of a fully strained, TiO2-terminated, ferroelectric BaTiO3 (BTO) (001) epitaxial film on a SrTiO3 substrate after controlled exposure to water. The epitaxial quality was checked by atomic force microscopy and X-ray diffraction. Quantitative low-energy electron diffraction compared with multiple scattering simulations was used to measure the structure of the first few atomic layers of BTO surface. The surface chemistry was investigated using high-resolution X-ray photoelectron spectroscopy. Finally, temperature-programmed desorption measured the desorption energies. We find that water undergoes mainly dissociative adsorption on the polarized BTO(001) surface. There are two competing sites for dissociative adsorption: oxygen vacancies and on-top Ti surface lattice atoms. The Ti on-top site is the dominant site for OH– chemisorption. One fifth of the surface Ti atoms bind to OH–. The concentration of surface oxygen vacancies acts mainly to favor initial physisorption. Before exposure to water, the outward pointing polarization in the BTO film is stabilized by atomic rumpling in the TiO2 termination layer. After exposure to water, the chemisorbed OH– species provide the screening, inverting the surface dipole layer and stabilizing the bulk polarization. Molecular adsorption is observed only for high water coverage.

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.