Recent developments in photovoltaic materials have led to continual improvements in their efficiency. We review the electrical characteristics of 16 widely studied geometries of photovoltaic materials with efficiencies of 10 to 29%. Comparison of these characteristics to the fundamental limits based on the Shockley-Queisser detailed-balance model provides a basis for identifying the key limiting factors, related to efficient light management and charge carrier collection, for these materials. Prospects for practical application and large-area fabrication are discussed for each material.

Lead-halide perovskites have emerged as high-performance photovoltaic materials. We mapped the propagation of photogenerated luminescence and charges from a local photoexcitation spot in thin films of lead tri-iodide perovskites. We observed light emission at distances of ≥50 micrometers and found that the peak of the internal photon spectrum red-shifts from 765 to ≥800 nanometers. We used a lateral-contact solar cell with selective electron- and hole-collecting contacts and observed that charge extraction for photoexcitation >50 micrometers away from the contacts arose from repeated recycling between photons and electron-hole pairs. Thus, energy transport is not limited by diffusive charge transport but can occur over long distances through multiple absorption-diffusion-emission events. This process creates high excitation densities within the perovskite layer and allows high open-circuit voltages.

We quantify activation energy, concentration, and diffusion coefficient of mobile ions in MAPbI3 perovskite solar cells using transient ion-drift measurements.

Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced ordering of the crystal structure. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices