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The development of switching converters to perform with the power processing of photovoltaic (PV) applications has been a topic receiving growing interest in recent years. This work presents a nonisolated buck-boost converter with a quadratic voltage conversion gain based on the I–IIA noncascading structure. The converter has a reduced component count and it is formed by a pair of L–C networks and two active switches, which are operated synchronously to achieve a wide conversion ratio and a quadratic dependence with the duty ratio. Additionally, the analysis using different sources and loads demonstrates the differences in the behavior of the converter, as well as the pertinence of including PV devices (current sources) into the analysis of new switching converter topologies for PV applications. In this work, the voltage conversion ratio, steady-state operating conditions and semiconductor stresses of the proposed converter are discussed in the context of PV applications. The operation of the converter in a PV scenario is verified by experimental results.

This paper presents, the studies of the influence of (radio frequency) RF power on the size distribution and visible photoluminescence (PL) of SiNx thin film deposited at 300[Formula: see text]C of substrate temperature by plasma enhanced chemical vapor deposition. RF power was varied (5–50[Formula: see text]W), and its aftereffect on the optical properties of thin films was investigated. By increasing the RF power between 5[Formula: see text]W and 25[Formula: see text]W, main PL peak showed a red shift with an increase in PL intensity, which is associated with an increase in the silicon nanocrystals size and density, respectively. Results obtained were confirmed with High-resolution transmission electron microscopy micrographs and from the statistical calculations. By attaining a precise RF power value, stable silicon nitride thin film with suitable optical properties can be achieved for the potential fabrication of optoelectronic devices.

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