Continuous-wave room temperature operated 3.0 μ m type I GaSb-based lasers with quinternary AlInGaAsSb barriers Appl. Phys. Lett. 92, 091106 (2008); 10.1063/1.2890053 High-peak-power pulsed operation of 2.0 μ m (AlGaIn)(AsSb) quantum-well ridge waveguide diode lasers J. Appl. Phys. 99, 053105 (2006); 10.1063/1.2179121Extraordinarily wide optical gain spectrum in 2.2-2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers

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In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm-thick GaInAsSb bulk layer, a blueshift of 83meV was found after annealing for 2h at 520°C, whereas for MQW structures the maximum shift was 61meV.