The last decade has witnessed drastic improvements of the electronic properties, environmental and operational stability, and processibility of organic semiconductors (OSCs). [1,2] Designing new materials with high carrier mobilities, μ, remains one of the main research objectives to enable faster operation and lower power consumption of circuits and addressing of advanced liquid crystal and organic lightemitting diode displays. [1,3] Yet despite exploring a wide range of material systems, charge carrier mobilities in excess of 10 cm 2 V −1 s −1 have only been achieved in very few molecular semiconductors and highly aligned polymers. [4][5][6] At present, despite significant general advances in the comprehension of transport physics, a Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electronphonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.
Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray diffraction, Raman and nuclear magnetic resonance spectroscopy, and molecular simulations combined indicate that the rotating bulky side chains trigger cooperative transition. Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials.
The fabrication of multifunctional high-performance organic thin-film transistors as key elements in future logic circuits is a major research challenge. Here we demonstrate that a photoresponsive bi-functional field-effect transistor with carrier mobilities exceeding 0.2 cm 2 V À 1 s À 1 can be developed by incorporating photochromic molecules into an organic semiconductor matrix via a single-step solution processing deposition of a two components blend. Tuning the interactions between the photochromic diarylethene system and the organic semiconductor is achieved via ad-hoc side functionalization of the diarylethene. Thereby, a large-scale phase-segregation can be avoided and superior miscibility is provided, while retaining optimal p-p stacking to warrant efficient charge transport and to attenuate the effect of photoinduced switching on the extent of current modulation. This leads to enhanced electrical performance of transistors incorporating small conjugated molecules as compared with polymeric semiconductors. These findings are of interest for the development of high-performing optically gated electronic devices.
A series of bulky end-capped [1]benzothieno[3,2-b]benzothiophenes (BTBTs) are developed in order to tune the packing structure via terminal substitution. A coupled theoretical and experimental study allows us to identify 2,7-di-tert-butylBTBT as a new high-performance organic semiconductor with large and well-balanced transfer integrals, as evidenced by quantum-chemical calculations. Single-crystal field-effect transistors show a remarkable average saturation mobility of 7.1 cm(2) V(-1) s(-1) .
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