Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H2S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO2 between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.

The purpose of this study was to test the hypothesis that administration of epigallocatechin-3-gallate (EGCG), a polyphenol present in abundance in widely consumed tea, inhibits cell proliferation, invasion, and angiogenesis in breast cancer patients. EGCG in 400 mg capsules was orally administered three times daily to breast cancer patients undergoing treatment with radiotherapy. Parameters related to cell proliferation, invasion, and angiogenesis were analyzed while blood samples were collected at different time points to determine efficacy of the EGCG treatment. Compared to patients who received radiotherapy alone, those given radiotherapy plus EGCG for an extended time period (two to eight weeks) showed significantly lower serum levels of vascular endothelial growth factor (VEGF), hepatocyte growth factor (HGF), and reduced activation of metalloproteinase-9 and metalloproteinase-2 (MMP9/MMP2). Addition of sera obtained from patients treated with combination of radiotherapy and EGCG feeding for 2–8 weeks to in vitro cultures of highly-metastatic human MDA-MB-231 breast cancer cells resulted in the following significant changes: (1) suppression of cell proliferation and invasion; (2) arrest of cell cycles at the G0/G1 phase; (3) reduction of activation of MMP9/MMP2, expressions of Bcl-2/Bax, c-Met receptor, NF-κB, and the phosphorylation of Akt. MDA-MB-231 cells exposed to 5–10 µM EGCG also showed significant augmentation of the apoptosis inducing effects of γ-radiation, concomitant with reduced NF-κB protein level and AKT phosphorylation. These results provide hitherto unreported evidence that EGCG potentiated efficacy of radiotherapy in breast cancer patients, and raise the possibility that this tea polyphenol has potential to be a therapeutic adjuvant against human metastatic breast cancer.

Metallic and plasmonic nanolasers have attracted growing interest recently. Plasmonic lasers demonstrated so far operate in hybrid photon-plasmon modes in transverse dimensions, rendering it impossible to separate photonic from plasmonic components. Thus only the far-field photonic component can be measured and utilized directly. But spatially separated plasmon modes are highly desired for applications including high-efficiency coupling of single-photon emitters and ultrasensitivity optical sensing. Here, we report a nanowire (NW) laser that offers subdiffraction-limited beam size and spatially separated plasmon cavity modes. By near-field coupling a high-gain CdSe NW and a 100 nm diameter Ag NW, we demonstrate a hybrid photon-plasmon laser operating at 723 nm wavelength at room temperature, with a plasmon mode area of 0.008λ(2). This device simultaneously provides spatially separated photonic far-field output and highly localized coherent plasmon modes, which may open up new avenues in the fields of integrated nanophotonic circuits, biosensing, and quantum information processing.

Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measurements of bulk and interface minority-carrier recombination rates in SnS thin films using optical-pump, terahertz (THz)-probe transient photoconductivity (TPC) measurements. Post-growth thermal annealing in H2S gas increases the minority-carrier lifetime, and oxidation of the surface reduces the surface recombination velocity. However, the minoritycarrier lifetime remains below 100 ps for all tested combinations of growth technique and postgrowth processing. Significant improvement in SnS solar cell performance will hinge on finding and mitigating as-yet-unknown recombination-active defects. We describe in detail our methodology for TPC experiments, and we share our data analysis routines in the form freelyavailable software.For a more sophisticated solar cell figure of merit, we consider the dimensionless ratio (FPV) of minority-carrier diffusion length to optical absorption length:D is the minority carrier diffusivity,  is the bulk minority-carrier lifetime, and  is the optical absorption coefficient. In Figure 1b we present compiled data for FPV and solar cell efficiency, including results for wafer-based silicon technologies. With the exception of silicon, all of the materials represented strongly absorb light at energies above their respective band gaps. For each material we calculate FPV using  as measured at the knee the curve of log10((E)). For the thin film materials we require that lifetime, diffusivity, absorption coefficient, and device measurements were reported for samples that were synthesized in the same laboratory and using as close to the same procedure as is reasonably possible. This requirement greatly reduces the number of data points compared to Figure 1a. For crystalline silicon we assume the values D = 30 cm 2 s -1 and  = 300 cm -1 .SnS is an absorber with several inherent advantages compared to materials that are widely used in solar cells, but its demonstrated efficiency is too low for commercial relevance. It is composed of non-toxic, Earth-abundant and inexpensive elements. SnS is an inert and waterinsoluble semiconducting mineral (Herzenbergite) with an indirect bandgap of 1.1 eV, strong light absorption for photons with energy above 1.4 eV ( > 10 4 cm -1 ), and intrinsic p-type conductivity with carrier concentration in the range 10 15 -10 17 cm -3 . 5-7 SnS evaporates congruently and is phase-stable up to 600 °C. 8,9 This means that SnS thin films can be deposited by thermal evaporation and its high-speed cousin, closed space sublimation (CSS), as is employed in the manufacture of CdTe solar cells. It also means that SnS phase control is simpler than for most thin film PV materials, nota...

As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing "false-negative" results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400°C) to stimulate grain growth, followed by a much thinner, low-temperature (200°C ) absorber deposition. At a lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5× superior shunt resistance R sh with smaller standard error σ Rsh . Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.