A monoclinic BiVO 4 film was grown on a transparent conducting substrate for photoelectrochemical oxidation of water. A photocurrent up to 2.3 mA cm −2 under visible light (λ > 420 nm) was achieved after treating the sample simply by electrochemical reduction followed by NaBH 4 . The high photocurrent is believed to be due to the improved carrier separation and transportation as a result of increased donor density. † Electronic supplementary information (ESI) available: Detailed information for experiment and XPS spectra. See

Copper nitride (Cu3N) nanocubes prepared by an organic solvothermal approach exhibit excellent electrocatalytic activity toward the oxygen reduction reaction (ORR) and nitrobenzene reduction (NBR).

A series of linear conjugated organoborane oligomers are synthesized here by introducing electron-deficient borole units to the well-explored thiophene unit of variable length. It is found that the photophysical properties, particularly the band structures of products, alter regularly with the extension of thiophene. Interestingly, such oligomers exhibit high activity for photocatalytic hydrogen evolution under visible light (λ > 420 nm), outperforming most of the reported linear polymers. The enhanced performance is possibly attributed to the strong electron-accepting nature of the borole group, as well as the good electron donor and light-harvesting properties of the thiophene group. The combination of these two units facilitates charge separation of oligomers, thus allowing the participation of as many photogenerated charge carriers as possible in the desired water reduction reaction. The results indicate the success of our strategy and the importance of rational molecular design for developing conjugated (oligo)polymers for efficient photocatalytic hydrogen evolution.

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

Sn-doped hematite films were electrochemically deposited on a fluorine-doped tin oxide substrate for use as an anode for efficient photoelectrochemical water oxidation.