The interactions of copper and copper oxide layers with 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (H+hfac) have been investigated. The results provide supporting evidence for proposed reactions of copper with H § which are thought to be responsible for the vapor-phase etching of copper. Specific reaction products depend on the chemical state of the copper in the film. Reaction of H § with Cu 2 § yields volatile reaction products of Cu~(hfac)2 and H20, while Cu 1 § yields the same products with a change in the chemical state of the surface to Cu(% No reaction is observable between H*hfac and Cu ~~ at temperatures studied in these experiments.

Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New data of fundamental properties of these metal oxides are reported and related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor material, deposition technique and corresponding annealing procedure for a specific application of these metal oxide films in microelectronics.

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