In this work, we address Resistive RAM (RRAM) variability. To this aim, we investigate various RRAM technologies (Oxide RAM and Conductive Bridging RAM), integrated on kb 1T1R arrays. Impact of variability is evaluated and discussed for various RRAM features: window margin, switching speed, consumption, retention and endurance. Solutions are proposed in order to improve overall RRAM performances. Optimized programming schemes are discussed. Importance of controlling the memory operation and programming energy to improve RRAM reliability is put in evidence.

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