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We report a superlattice parametric oscillator (SPO), with a GaAs/AlAs superlattice as the active element. The SPO was pumped by a microwave field (power 4 mW) and produced third harmonic radiation at subterahertz frequencies (near 300 GHz; 0.1 mW). We attribute the parametric gain to the nonlinearity of the miniband transport.

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We report on a semiconductor–superlattice frequency multiplier for the generation of submillimeter waves. A monochromatic microwave-pump field (frequency near 100 GHz) periodically excited a superlattice into states of negative differential conductivity giving rise to space-charge domain creation and annihilation joint with a nonsinusoidal high-frequency current and radiation at harmonics of the pump field. A highly doped GaAs/AlAs superlattice allowed the conversion of pump to third-harmonic radiation at 300 GHz with an efficiency of about 1% (power∼30 μW).

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