Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this work, we report the atomic structure, electronic properties, and vibrational modes of few-layered PdSe exfoliated from bulk crystals, a pentagonal 2D layered noble transition metal dichalcogenide with a puckered morphology that is air-stable. Micro-absorption optical spectroscopy and first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) to 1.3 eV (monolayer). The Raman-active vibrational modes of PdSe were identified using polarized Raman spectroscopy, and a strong interlayer interaction was revealed from large, thickness-dependent Raman peak shifts, agreeing with first-principles Raman simulations. Field-effect transistors made from the few-layer PdSe display tunable ambipolar charge carrier conduction with a high electron field-effect mobility of ∼158 cm V s, indicating the promise of this anisotropic, air-stable, pentagonal 2D material for 2D electronics.

The first GaS nanosheet-based photodetectors are demonstrated on both mechanically rigid and flexible substrates. Highly crystalline, exfoliated GaS nanosheets are promising for optoelectronics due to strong absorption in the UV-visible wavelength region. Photocurrent measurements of GaS nanosheet photodetectors made on SiO2/Si substrates and flexible polyethylene terephthalate (PET) substrates exhibit a photoresponsivity at 254 nm up to 4.2 AW(-1) and 19.2 AW(-1), respectively, which exceeds that of graphene, MoS2, or other 2D material-based devices. Additionally, the linear dynamic range of the devices on SiO2/Si and PET substrates are 97.7 dB and 78.73 dB, respectively. Both surpass that of currently exploited InGaAs photodetectors (66 dB). Theoretical modeling of the electronic structures indicates that the reduction of the effective mass at the valence band maximum (VBM) with decreasing sheet thickness enhances the carrier mobility of the GaS nanosheets, contributing to the high photocurrents. Double-peak VBMs are theoretically predicted for ultrathin GaS nanosheets (thickness less than five monolayers), which is found to promote photon absorption. These theoretical and experimental results show that GaS nanosheets are promising materials for high-performance photodetectors on both conventional silicon and flexible substrates.

Man-made structural colors, which originate from resonant interactions between visible light and manufactured nanostructures, are emerging as a solution for ink-free color printing. We show that non-iridescent structural colors can be conveniently produced by nanostructures made from high-index dielectric materials. Compared to plasmonic analogs, color surfaces with high-index dielectrics, such as germanium (Ge), have a lower reflectance, yielding a superior color contrast. Taking advantage of band-to-band absorption in Ge, we laser-postprocess Ge color metasurfaces with morphology-dependent resonances. Strong on-resonance energy absorption under pulsed laser irradiation locally elevates the lattice temperature (exceeding 1200 K) in an ultrashort time scale (1 ns). This forms the basis for resonant laser printing, where rapid melting allows for surface energy-driven morphology changes with associated modification of color appearance. Laser-printable high-index dielectric color metasurfaces are scalable to a large area and open a new paradigm for printing and decoration with nonfading and vibrant colors.