The suppression of unnecessary radio-electronic noise and the protection of electronic devices from electromagnetic interference by the use of pliable highly microwave radiation absorbing composite materials based on polymers or rubbers filled with conductive and magnetic fillers have been proposed. Since the working frequency bands of electronic devices and systems are rapidly expanding up to the millimeter wave range, the capabilities of absorbing and shielding composites should be evaluated for increasing operating frequency. The point is that the absorption capacity of conductive and magnetic fillers essentially decreases as the frequency increases. Therefore, this paper is devoted to the absorbing capabilities of composites filled with high-loss dielectric fillers, in which absorption significantly increases as frequency rises, and it is possible to achieve the maximum frequency selective of absorption due to electromagnetic and electromechanical resonances.

Functional possibilities of lJHF and microwave devices based on dielectric resonators (DRs) could be essentially extended if the basic resonant frequency of attenuation-frequency characteristic (AFC) could be fast controlled. It was shown that each DR by itself allows to control its resonantpequency up to 10 -30% with a high Q-factor preservation [ 11. However, the commonly accepted constructions of DR-filters are unsuitable for such controlling owing to the unwanted change in their AFC. Proposed in this Report new design of DR-systems provides AFC shifting in frequency while the shape of AFC being undistorted due to independence of own modes of DRs employed. Based on this concepts, various band-pass and band-rejection overturned DR-based filters were realized. Some new results were obtained as toJilter AFC controlling.

Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters such as the oxygen partial pressure during IGZO sputtering and post-deposition thermal annealing. In this study, we investigate the combined effect of sputtering conditions of amorphous IGZO (In:Ga:Zn=1:1:1) and postdeposition thermal annealing on the properties of vertical thin-film Pt-IGZO-Cu Schottky diodes, and evaluated the applicability of the fabricated Schottky diodes for low-frequency half-wave rectifier circuits. The change of the oxygen content in the gas mixture from 1.64% to 6.25%, and post-deposition annealing is shown to increase the current rectification ratio from 10 5 to 10 7 at ±1 V, Schottky barrier height from 0.64 eV to 0.75 eV, and the ideality factor from 1.11 to 1.39. Half-wave rectifier circuits based on the fabricated Schottky diodes were simulated using parameters extracted from measured current-voltage and capacitancevoltage characteristics. The half-wave rectifier circuits were realized at 100 kHz and 300 kHz on as-fabricated Schottky diodes with active area of 200 μm × 200 μm, which is relevant for the near-field communication (125 kHz-134 kHz), and provided the output voltage amplitude of 0.87 V for 2 V supply voltage. The simulation results matched with the measurement data, verifying the model accuracy for circuit level simulation. INDEX TERMS amorphous In-Ga-Zn-O, capacitance-voltage characteristics, currentvoltage characteristics, half-wave rectifiers, Schottky diodes, sputtering

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