Stacking solar cells with decreasing band gaps to form tandems presents the possibility of overcoming the single-junction Shockley-Queisser limit in photovoltaics. The rapid development of solution-processed perovskites has brought perovskite single-junction efficiencies >20%. However, this process has yet to enable monolithic integration with industry-relevant textured crystalline silicon solar cells. We report tandems that combine solution-processed micrometer-thick perovskite top cells with fully textured silicon heterojunction bottom cells. To overcome the charge-collection challenges in micrometer-thick perovskites, we enhanced threefold the depletion width at the bases of silicon pyramids. Moreover, by anchoring a self-limiting passivant (1-butanethiol) on the perovskite surfaces, we enhanced the diffusion length and further suppressed phase segregation. These combined enhancements enabled an independently certified power conversion efficiency of 25.7% for perovskite-silicon tandem solar cells. These devices exhibited negligible performance loss after a 400-hour thermal stability test at 85°C and also after 400 hours under maximum power point tracking at 40°C.

Perovskite/silicon tandem solar cells promise power conversion efficiencies (PCE) beyond the Shockley-Queisser limit of single-junction devices, however, their actual outdoor performance is yet to be investigated. Here we fabricate 25%-efficient two-terminal (2T) monolithic perovskite/silicon tandem solar cells and test them outdoors in a hot and sunny climate. We find that the temperature dependence of the bandgaps (Eg) of both silicon and perovskitewhich follow opposing trendsshifts the devices away from current matching for 2T tandems optimized at standard test conditions (STC, i.e., AM1.5G spectrum, 1000 W/m 2 , 25 °C). Consequently, we argue that the optimal perovskite bandgap at STC is Eg <1.68 eV (at STC

Tandem solar cells involving metal-halide perovskite subcells offer routes to power conversion efficiencies (PCEs) that exceed the single-junction limit; however, reported PCE values for tandems have so far lain below their potential due to inefficient photon harvesting. Here we increase the optical path length in perovskite films by preserving smooth morphology while increasing thickness using a method we term boosted solvent extraction. Carrier collection in these filmsas madeis limited by an insufficient electron diffusion length; however, we further find that adding a Lewis base reduces the trap density and enhances the electron-diffusion length to 2.3 µm, enabling a 19% PCE for 1.63 eV semi-transparent perovskite cells having an average near-infrared transmittance of 85%. The perovskite top cell combined with solution-processed colloidal quantum dot:organic hybrid bottom cell leads to a PCE of 24%; while coupling the perovskite cell with a silicon bottom cell yields a PCE of 28.2%.

Bifacial monolithic perovskite/silicon tandem solar cells exploit albedo-the diffuse reflected light from the environment-to increase their performance above that of monofacial perovskite/silicon tandems. Here we report bifacial tandems with certified power conversion efficiencies >25% under monofacial AM1.5G 1 sun illumination that reach power-generation densities as high as ~26 mW cm -2 under outdoor testing. We investigated the perovskite bandgap required to attain optimized current matching under a variety of realistic illumination and albedo conditions. We then compared the properties of these bifacial tandems exposed to different albedos and provide energy yield calculations for two locations with different environmental conditions. Finally, we present a comparison of outdoor test fields of monofacial and bifacial perovskite/silicon tandems to demonstrate the added value of tandem bifaciality for locations with albedos of practical relevance.

Parasitic absorption in transparent electrodes is one of the main roadblocks to enable power conversion efficiencies (PCEs) for perovskite-based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, we show the excellent properties of Zr-doped indium oxide (IZRO) transparent electrodes for such applications, with improved near-infrared (NIR) response, compared to conventional In-doped tin oxide (ITO) electrodes. Optimized IZRO films feature a very high electron mobility (up to ~77 cm 2 /V•s), enabling highly infrared transparent films with very low sheet resistance (~18 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ~5% for IZRO within the solar spectrum (250-2500 nm range), to be compared with ~10% for commercial ITO. Fundamentally, we find that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In2O3) films due to Zr-doping. Overall, on four-terminal perovskite/silicon tandem device level, we obtained an absolute 3.5