No abstract

A novel highly efficient ionic electro‐optic quinolinium single crystals for THz wave applications is reported. Acentric quinolinium derivatives, HMQ‐T (2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐methylbenzenesulfonate) and HMQ‐MBS (2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐methoxybenzenesulfonate) exhibit high order parameters cos3θp = 0.92 and cos3θp = 1.0, respectively, as well as a large macroscopic optical nonlinearity, which is in the range of the benchmark stilbazolium DAST (N,N‐dimethylamino‐N’‐methylstilbazolium 4‐methylbenzenesulfonate) and phenolic polyene OH1 (2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile) crystals. As‐grown unpolished bulk HMQ‐T crystals with a side length of about 6 mm and thickness of 0.56 mm exhibit 3.1 times higher THz generation efficiency than 0.37 mm thick OH1 crystals and about 8.4 times higher than 1 mm thick inorganic standard ZnTe crystals at the near‐infrared fundamental wavelength of 836 nm. Therefore, HMQ crystals with high order parameter obviously have a very high potential for high power THz‐wave generation and its applications.

Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene–light interaction.

Lithium thioindate (LiInS2) is a new nonlinear chalcogenide biaxial material transparent from 0.4 to 12 µm, that has been successfully grown in large sizes and good optical quality. We report on new physical properties that are relevant for laser and nonlinear optics applications. With respect to AgGaS(e)2 ternary chalcopyrite materials, LiInS2 displays a nearly-isotropic thermal expansion behavior, a 5-times larger thermal conductivity associated with high optical damage thresholds, and an extremely low intensity-dependent absorption allowing direct high-power downconversion from the near-IR to the deep mid-IR. Continuous-wave difference-frequency generation (5-11 µm) of Ti:sapphire laser sources is reported for the first time.

The efficient passive mode-locking of a Ti:sapphire laser with a monolayer graphene saturable absorber is demonstrated for the first time. High-quality and large-area (1 in.) monolayer graphene, synthesized by chemical vapor deposition, exhibits ultrafast recovery times and excellent nonlinear absorption behavior for bulk solid-state laser mode-locking near 800 nm. The continuous-wave mode-locked Ti:sapphire laser generates 63-fs pulses with output powers up to 480 mW under stable operation at 99.4 MHz.