Topological Dirac semimetals with accidental band touching between conduction and valence bands protected by time reversal and inversion symmetry are at the frontier of modern condensed matter research. A majority of discovered topological semimetals are nonmagnetic and conserve time reversal symmetry. Here we report the experimental discovery of an antiferromagnetic topological nodal-line semimetallic state in GdSbTe using angle-resolved photoemission spectroscopy. Our systematic study reveals the detailed electronic structure of the paramagnetic state of antiferromagnetic GdSbTe. We observe the presence of multiple Fermi surface pockets including a diamond-shape, and small circular pockets around the zone center and high symmetry X points of the Brillouin zone (BZ), respectively. Furthermore, we observe the presence of a Dirac-like state at the X point of the BZ and the effect of magnetism along the nodal-line direction. Interestingly, our experimental data show a robust Dirac-like state both below and above the magnetic transition temperature (TN = 13 K). Having a relatively high transition temperature, GdSbTe provides an archetypical platform to study the interaction between magnetism and topological states of matter.
The experimental discovery of the topological Dirac semimetal establishes a platform to search for various exotic quantum phases in real materials. ZrSiS-type materials have recently emerged as topological nodal-line semimetals where gapped Dirac-like surface states are observed. Here, we present a systematic angle-resolved photoemission spectroscopy (ARPES) study of ZrGeTe, a nonsymmorphic symmetry protected Dirac semimetal. We observe two Dirac-like gapless surface states at the sameX point of the Brillouin zone. Our theoretical analysis and first-principles calculations reveal that these are protected by crystalline symmetry. Hence, ZrGeTe appears as a rare example of a naturally fine tuned system where the interplay between symmorphic and non-symmorphic symmetry leads to rich phenomenology, and thus opens for opportunities to investigate the physics of Dirac semimetallic and topological insulating phases realized in a single material. arXiv:1711.08011v1 [cond-mat.mes-hall] 21 Nov 2017 the X (R) point. Here ↑(↓) denotes a pseudospin in the presence of SOC corresponding to the P Θ eigenvalue +i(−i). (b),(c) Our ab initio calculations yield two band inversions at R (and the equivalent TRIM) in bulk ZrGeTe. The calculated products of parity eigenvalues at the nonequivalent TRIMs are shown in the tables. As we write below each table, each band inversion corresponds to a different eigenvalue of the Mẑ nonsymmorphic symmetry operator, as discussed in the sections below. (d) Bottom: Schematics of the first octant of the BZ and non-equivalent high-symmetry points (TRIMs). In parenthesis the parity of δ(Γ i ) is shown. Top: Brillouin zone of the (110) surface that is probed by our ARPES measurements. The bulk inversions induce two Dirac surface states at theX 1 andX 2 , respectively, which we observed by ARPES. For each surface
Among the quantum materials that have recently gained interest are the topological insulators, wherein symmetry-protected surface states cross in reciprocal space, and the Dirac nodal-line semimetals, where bulk bands touch along a line in k-space. However, the existence of multiple fermion phases in a single material has not been verified yet. Using angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations, we systematically study the metallic material Hf2Te2P and discover properties, which are unique in a single topological quantum material. We experimentally observe weak topological insulator surface states and our calculations suggest additional strong topological insulator surface states. Our first-principles calculations reveal a one-dimensional Dirac crossing—the surface Dirac-node arc—along a high-symmetry direction which is confirmed by our ARPES measurements. This novel state originates from the surface bands of a weak topological insulator and is therefore distinct from the well-known Fermi arcs in semimetals.
The higher order topological insulator (HOTI) has enticed enormous research interests owing to its novelty in supporting gapless states along the hinges of the crystal. Despite several theoretical predictions, enough experimental confirmation of HOTI state in crystalline solids is still lacking. It has been well known that interplay between topology and magnetism can give rise to various magnetic topological states including HOTI and Axion insulator states. Here using the high-resolution angle-resolved photoemission spectroscopy (ARPES) combined with the first-principles calculations, we report a systematic study on the electronic band topology across the magnetic phase transition in EuIn2As2 which possesses an antiferromagnetic ground state below 16 K. Antiferromagnetic EuIn2As2 has been predicted to host both the Axion insulator and HOTI phase. Our experimental results show the clear signature of the evolution of the topological state across the magnetic transition. Our study thus especially suited to understand the interaction of higher-order topology with magnetism in materials.
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