Abstract-We report on a heterogeneously integrated InP/SOI laser source realized through DVS-BCB wafer bonding. The hybrid lasers present several new features. The III-V laser is only 1.7μm wide, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with highperformance modulator designs and allowing efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30mA and an output power of more than 4mW at room temperature in continous wave operation regime. Continuous wave lasing up to 70C is obtained.Index Terms-Hybrid integrated circuits, silicon laser, silicon-on-insulator (SOI) technology, adiabatic taper.

An interface characterization technique, termed the Fermi-level efficiency (FLE) method, is proposed for evaluating the passivation level of high trap density oxide-semiconductor interfaces. Based on the characteristic charge trapping time-energy relation and the conductance method, the FLE method examines the Fermi-level displacement at the oxide-semiconductor interface under applied gate bias. The obtained Fermi-level efficiencies can be used to assess the interface qualities of metal-oxide-semiconductor devices with III-V and other novel substrate materials.