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We studied the phase transition behavior of cubic BaZrO3 perovskite by in situ high pressure synchrotron X-ray diffraction experiments up to 46.4 GPa at room temperature. The phase transition from cubic phase to tetragonal phase was observed in BaZrO3 for the first time, which takes place at 17.2 GPa. A bulk modulus 189 (26) GPa for cubic BaZrO3 is derived from the pressure–volume data. Upon decompression, the high pressure phase transforms into the initial cubic phase. It is suggested that the unstable phonon mode caused by the rotation of oxygen octahedra plays a crucial role in the high pressure phase transition behavior of BaZrO3.

Extending photoelectric response to the near-infrared (NIR) region using upconversion luminescent (UCL) materials is one promising approach to obtain high-efficiency perovskite solar cells (PSCs). However, challenges remain due to the shortage of highly efficient UCL materials and device structure. NaCsWO3 nanocrystals exhibit near-infrared absorption arising from the local surface plasmon resonance (LSPR) effect, which can be used to boost the UCL of rare-earth-doped upconversion nanoparticles (UCNPs). In this study, using NaCsWO3 as the LSPR center, NaCsWO3@NaYF4@NaYF4:Yb,Er nanoparticles were synthesized and the UCL intensity could be enhanced by more than 124 times when the amount of NaCsWO3 was 2.8 mmol %. Then, such efficient UCNPs were not only doped into the hole transport layer but also used to modify the perovskite film in PSCs, resulting in the highest power conversion efficiency (PCE) reaching 18.89% (that of the control device was 16.01% and the PCE improvement was 17.99%). Possible factors for the improvement of PSCs were studied and analyzed. It is found that UCNPs can broaden the response range of PSCs to the NIR region due to the LSPR-enhanced UCL and increase the visible light reabsorption of PSCs due to the scattering and reflection effect, which generate more photocurrent in PSCs. In addition, UCNPs modify the perovskite film by effectively filling the holes and gaps at the grain boundary and eliminating the perovskite surface defects, which lead to less carrier recombination and then effectively improve the performance of PSC devices.

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