New advances toward microstructural improvement of epitaxial CeO2 films grown by chemical solution deposition and their use as buffer layers for YBa2Cu3O7 (YBCO) films are presented. We demonstrate that the degree of epitaxy and the fraction of (001) atomically flat surface area are controlled by the incorporation of tetravalent (Zr4+) or trivalent (Gd3+) cations into the ceria lattice. The degree of epitaxy has been investigated by means of Rutherford backscattering spectroscopy-channeling and reflection high-energy electron diffraction, and a new methodology is also presented to quantify the fraction of (001) atomically flat area from atomic force microscopy images. Results are further correlated with the superconducting properties, microstructure, and texture of YBCO films grown by the trifluoroacetate route. A comparison with pulsed laser deposition and YBCO films grown on the same ceria layers is also presented. This growth procedure has allowed us to obtain all chemical multilayer films with controlled microstructure and critical current densities above 4 MA cm−2 at 77 K.

A new approach is presented to produce amorphous porous silicon coatings (a-pSi) with closed porosity by magnetron sputtering of a silicon target. It is shown how the use of He as the process gas at moderated power (50-150 W RF) promotes the formation of closed nanometric pores during the growth of the silicon films. The use of oblique-angle deposition demonstrates the possibility of aligning and orientating the pores in one direction. The control of the deposition power allows the control of the pore size distribution. The films have been characterized by a variety of techniques, including scanning and transmission electron microscopy, electron energy loss spectroscopy, Rutherford back scattering and x-ray photoelectron spectroscopy, showing the incorporation of He into the films (most probably inside the closed pores) and limited surface oxidation of the silicon coating. The ellipsometry measurements show a significant decrease in the refractive index of porous coatings (n(500 nm) = 3.75) in comparison to dense coatings (n(500 nm) = 4.75). The capability of the method to prepare coatings with a tailored refractive index is therefore demonstrated. The versatility of the methodology is shown in this paper by preparing intrinsic or doped silicon and also depositing (under DC or RF discharge) a-pSi films on a variety of substrates, including flexible materials, with good chemical and mechanical stability. The fabrication of multilayers of silicon films of controlled refractive index in a simple (one-target chamber) deposition methodology is also presented.

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 Users may download and print one copy of any publication from the public portal for the purpose of private study or research.  You may not further distribute the material or use it for any profit-making activity or commercial gain  You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.