Articles you may be interested inThickness modulation effects of Al2O3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks

Abstract— Organic thin‐film‐transistor (OTFT) technologies have been developed to achieve a flexible backplane for driving full‐color organic light‐emitting diodes (OLEDs) with a resolution of 80 ppi. The full‐color pixel structure can be attained by using a combination of top‐emission OLEDs and fine‐patterned OTFTs. The fine‐patterned OTFTs are integrated by utilizing an organic semiconductor (OSC) separator, which is an insulating wall structure made of an organic insulator. Organic insulators are actively used for the OTFT integration, as well as for the separator, in order to enhance the mechanical flexibility of the OTFT backplane. By using these technologies, active‐matrix OLED (AMOLED) displays can be driven by the developed OTFT backplane even when they are mechanically flexed.

A method for forming organic single-crystal arrays from solution is demonstrated using an organic semiconductor, 3,9-bis(4-ethylphenyl)-peri-xanthenoxanthene (C(2) Ph-PXX). Supersaturation of C(2) Ph-PXX/tetralin solution is spatially changed by making a large difference in solvent evaporation to generate nuclei at the designated location. The method is simple to implement since it employs only a micropattern and control of the solvent vapor pressure during growth.

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We found an abrupt reduction of contact resistance, Rc, in pentacene bottom-contact thin-film transistors (TFTs) with Au/Ti source/drain (S/D) electrodes when Ti thickness is below ∼3nm. Our results suggest that the direct ohmic contact with a few molecular layer channel is a key to reduce the Rc of the S/D electrodes. We propose a Au/self-assembled monolayer electrode structure enabling direct ohmic contact with these few molecular layer channels, and achieved high-performance bottom-contact TFTs with an extrinsic mobility of 1.1cm2∕Vs, an on/off ratio of 106, and a subthreshold swing of 0.3 V/decade.