Peroxisome proliferator activator receptor-gamma (PPARγ) is a ligand-activated transcriptional factor involved in the carcinogenesis of various cancers. Insulin-like growth factor-binding protein-3 (IGFBP-3) is a tumor suppressor gene that has anti-apoptotic activity. The purpose of this study was to investigate the anticancer mechanism of PPARγ with respect to IGFBP-3. PPARγ was overexpressed in SNU-668 gastric cancer cells using an adenovirus gene transfer system. The cells in which PPARγ was overexpressed exhibited growth inhibition, induction of apoptosis, and a significant increase in IGFBP-3 expression. We investigated the underlying molecular mechanisms of PPARγ in SNU-668 cells using an IGFBP-3 promoter/luciferase reporter system. Luciferase activity was increased up to 15-fold in PPARγ transfected cells, suggesting that PPARγ may directly interact with IGFBP-3 promoter to induce its expression. Deletion analysis of the IGFBP-3 promoter showed that luciferase activity was markedly reduced in cells without putative p53-binding sites (-Δ1755, -Δ1795). This suggests that the critical PPARγ-response region is located within the p53-binding region of the IGFBP-3 promoter. We further demonstrated an increase in PPARγ-induced luciferase activity even in cells treated with siRNA to silence p53 expression. Taken together, these data suggest that PPARγ exhibits its anticancer effect by increasing IGFBP-3 expression, and that IGFBP-3 is a significant tumor suppressor.

We report the microstructure and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times. A lens shaped pattern was used to reduce the threading dislocation density and to improve optical emission efficiency. A scanning electron microscope (SEM) image shows flat and smooth surface of GaN grown on PSS at 80 min which could be achieved by lateral growth from the trench region. From the DCXRD spectra, full width at half maximun (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence was observed for GaN on PSS as the growth time increased. From the PL spectra, FWHM was 82.2 meV at peak position 363.9 nm for the sample grown for 80 min. It is clearly seen that the threading dislocations can be reduced by lateral growth improving the light emission efficiency by internal light reflection on the lens surface for GaN grown on PSS.

These results provide useful information for determining AtMT effectiveness in B. bassiana isolates, particularly antibiotic susceptibility and the role of promoters.

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Vertically aligned GaN nanocolumn arrays were grown by molecular beam epitaxy on Gallium coated silicon substrate. The dense packing of the NCs gives them the appearance of a continuous film in surface view, but cross-sectional analysis shows them to be isolated nanostructures. The GaN nanocolumns have uniform diameters of 85 nm, lengths up to 720 nm and possess a pyramid like tip. Photoluminescence measurements of NCs show excitonic emission with a dominant, narrow peak centered at 363 nm and FWHM of 68 meV. From the Raman spectrum, peaks at 566.9 and 730 cm-1 are assigned to the E2 and A1(LO) GaN phonons modes which clearly indicates that the grown nanocolumns are highly crystalline. The grown nanocolumns are highly oriented and perpendicular to the growth surface.