B ecause of the zero-bandgap of group IV 2D materials such as graphene, silicene, and germanene, 1,2 it totally restricts their applications for channel and emission materials in switching and

Multilayer antimonene nanoribbons with room temperature orange light emission uniformly distributed on InSb were synthesized by the plasma-assisted process. The bandgap opening was caused by the quantum confinement effect of the nanoribbon structure and the turbostratic stacking of antimonene layers. This attractive two-dimensional material, whose band structure is proper for applications of transistors and light-emitting diodes, was first synthesized.

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Nonepitaxial multilayer silicene with a lonsdaleite structure was synthesized from a 4H-SiC substrate using an implantation-assisted process. An sp(3)-like bonding signal was fitted in a lonsdaleite Si XPS spectrum. The multilayer silicene was directly observed and the derived interplanar distances were found to be nearly consistent with the theoretical values.