In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm2 along with a red-shift of the peak position from 624.69 to 627.12 nm ( Δ λ  = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output.

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In this study, quantum dot color conversion layers (QDCCLs) for full-color micro-LED display were successfully fabricated using microfluidics to conduct red and green perovskite quantum dots to the position of the pixel array. The QDCCL with full-color pixel size of 200 × 200 μm and sub-pixel size of 140 × 50 μm was achieved. Perovskite quantum dots with high quantum yield and narrow full width at half-maximum were used to achieve a wide color gamut, which was 131% of National Television Systems Committee standard. The proposed microfluidics-based QDCCL featured easy fabrication, low cost, high performance, and good integration prospects.