Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied bulk properties, while their single-layer variants have become one of the most prominent examples of two-dimensional materials beyond graphene. Their disparate ground states largely depend on transition metal d-electron-derived electronic states, on which the vast majority of attention has been concentrated to date. Here, we focus on the chalcogen-derived states. From density-functional theory calculations together with spin-and angle-resolved photoemission, we find that these generically host a coexistence of type-I and type-II three-dimensional bulk Dirac fermions as well as ladders of topological surface states and surface resonances. We demonstrate how these naturally arise within a single p-orbital manifold as a general consequence of a trigonal crystal field, and as such can be expected across a large number of compounds. Already, we demonstrate their existence in six separate TMDs, opening routes to tune, and ultimately exploit, their topological physics.The classification of electronic structures based on their topological properties has opened powerful routes for understanding solid state materials. 1 The nowfamiliar Z 2 topological insulators are most renowned for their spin-polarised Dirac surface states residing in inverted bulk band gaps. 1 In systems with rotational invariance, a band inversion on the rotation axis can generate protected Dirac cones with a point-like Fermi surface of the bulk electronic structure. 2-8 If either inversion or time-reversal symmetry is broken, a bulk Dirac point can split into a pair of spin-polarised Weyl points. 9-15 Unlike for elementary particles, Lorentz-violating Weyl fermions can also exist in the solid state, manifested as a tilting of the Weyl cone. If this tilt is sufficiently large, so-called type-II Weyl points can occur, now formed at the touching of open electron and hole pockets. [15][16][17][18][19][20][21][22] Realising such phases in solid-state materials not only offers unique environments and opportunities for studying the fundamental properties of fermions, but also holds potential for applications exploiting their exotic surface excitations and bulk electric and thermal transport properties. [23][24][25][26][27] Consequently, there is an intense current effort focused on identifying compounds which host the requisite band inversions. In many cases, however, this arXiv:1702.08177v2 [cond-mat.mtrl-sci]

At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from strong Coulomb interactions between transition metal and oxygen ions. Such electronic correlations offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. Here we show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metal-oxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we probe charge reconstruction at interfaces with gadolinium titanate GdTiO3. X-ray absorption spectroscopy shows that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence.

The GALAXIES beamline at the SOLEIL synchrotron is dedicated to inelastic X-ray scattering (IXS) and photoelectron spectroscopy (HAXPES) in the 2.3-12 keV hard X-ray range. These two techniques offer powerful complementary methods of characterization of materials with bulk sensitivity, chemical and orbital selectivity, resonant enhancement and high resolving power. After a description of the beamline components and endstations, the beamline capabilities are demonstrated through a selection of recent works both in the solid and gas phases and using either IXS or HAXPES approaches. Prospects for studies on liquids are discussed.