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The structure, morphology, and growth behavior of aspartame form I-A are presented. This form can be obtained from a purely aqueous solution and is the form with the highest industrial importance. The aspartame molecules are arranged around large hydrophilic channels filled with water molecules. The crystal morphology of this compound is needlelike with polar growth behavior in the needle direction. The side faces show a large nucleation barrier for growth, whereas the top faces possess a much smaller barrier. Monte Carlo simulations are performed for this crystal structure, and the resulting growth rate, morphology, and polarity are all in agreement with the experimental observations.

We propose a new design scheme to improve the SRAM read and write operation margins in the presence of a large Vth variability. By applying this scheme to a 0.494 µm2 SRAM cell with a β ratio of 1, which is an aggressively small cell size, we can achieve a high-yield 8M-SRAM for a wide range of Vth value using a 65 nm LSTP CMOS technology.

Si-based nanosheet bundles were formed by Ca-atom extraction from CaSi2 crystals by thermal treatment using FeCl2, FeCl3, NH4Cl, and MgCl2. The morphological property of the Si-based nanosheet bundles was examined. Though the Si-based nanosheets were formed under the stated thermal treatment conditions using FeCl3, the formation of iron-oxide phases was accelerated at higher temperatures and longer duration times for the highest thermal treatment temperatures using FeCl2. Thinner and thicker nanosheets were obtained using NH4Cl and MgCl2, respectively. The morphological properties of the Si-based nanosheet bundles were compared to each other and their formation mechanism was discussed in terms of the thermal instability of the chlorides, their vapor pressure and thermal treatment temperature profiles.

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