Perovskite materials have generated significant interest from academia and industry as a potential component in next-generation, high-efficiency, low-cost, photovoltaic (PV) devices. The record efficiency reported for perovskite solar cells has risen rapidly, and is now more than 22%. However, due to their complex dynamic behaviour, the process of measuring the efficiency of perovskite solar cells appears to be much more complicated than for other technologies. It has long been acknowledged that this is likely to greatly reduce the reliability of reported efficiency measurements, but the quantitative extent to which this occurs has not been determined. To investigate this, we conduct the first major inter-comparison of this PV technology. The participants included two labs accredited for PV performance measurement (CSIRO and NREL) and eight PV research laboratories. We find that the interlaboratory measurement variability can be almost ten times larger for a slowly responding perovskite cell than for a control silicon cell. We show that for such a cell, the choice of measurement method, far more so than measurement hardware, is the single-greatest cause for this undesirably large variability.We provide recommendations for identifying the most appropriate method for a given cell, depending on its stabilisation and degradation behaviour. The results of this study suggest that identifying a consensus technique for accurate and meaningful efficiency measurements of perovskite solar cells will lead to an immediate improvement in reliability. This, in turn, should assist device researchers to correctly evaluate promising new materials and fabrication methods, and further boost the development of this technology.View Article Online ‡ We note that in deployed PV systems, MPPT is used to maximise electrical power generation under varying climatic conditions. In contrast, when implemented for efficiency measurements of perovskite solar cells, the motivation is oen to identify the steady-state maximum-power-point that is slowly established under non-varying conditions.
The absorber layers in perovskite solar cells possess a high concentration of mobile ion vacancies. These vacancies undertake thermally activated hops between neighbouring lattice sites. The mobile vacancy concentration N 0 is much higher and the activation energy E A for ion hops is much lower than is seen in most other semiconductors due to the inherent softness of perovskite materials. The timescale at which the internal electric field changes due to ion motion is determined by the vacancy diffusion coefficient D v and is similar to the timescale on which the external bias changes by a significant fraction of the open circuit voltage at typical scan rates. Therefore hysteresis is often observed in which the shape of the current-voltage, J-V, characteristic depends on the direction of the voltage sweep. There is also evidence that this defect motion plays a role in degradation. By employing a charge transport model of coupled ion-electron conduction in a perovskite solar cell, we show that E A for the ion species responsible for hysteresis can be obtained directly from measurements of the temperature variation of the scan-rate dependence of short-circuit current and of the hysteresis factor H. This argument is validated by comparing E A deduced from measured J-V curves for four solar cell structures with density functional theory calculations. In two of these structures the perovskite is MAPbI 3 (MAPI) where MA is methylammonium, CH 3 NH 3 , the hole transport layer (HTL) is spiro (spiro-OMeTAD, 2,2',7,7'tetrakis[N,N-di(4-methoxyphenyl) amino]-9,9'-spirobifluorene) and the electron transport layer (ETL) is TiO 2 or SnO 2 . For the third and fourth structures, the perovskite layer is FAPbI 3 (FAPI) where FA is formamidinium, HC(NH 2 ) 2 , or MAPbBr 3 (MAPBr) and in both cases the HTL is spiro and the ETL is SnO 2 . For all four structures, the hole and electron extracting electrodes are Au and FTO (fluorine doped tin oxide) respectively. We also use our model to predict how the scan rate dependence of the power conversion efficiency varies with E A , N 0 and parameters determining free charge recombination.
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