Two-dimensional (2D) materials have been studied extensively as monolayers, vertical or lateral heterostructures. To achieve functionalization, monolayers are often patterned using soft lithography and selectively decorated with molecules. Here we demonstrate the growth of a family of 2D materials that are intrinsically patterned. We demonstrate that a monolayer of PtSe can be grown on a Pt substrate in the form of a triangular pattern of alternating 1T and 1H phases. Moreover, we show that, in a monolayer of CuSe grown on a Cu substrate, strain relaxation leads to periodic patterns of triangular nanopores with uniform size. Adsorption of different species at preferred pattern sites is also achieved, demonstrating that these materials can serve as templates for selective self-assembly of molecules or nanoclusters, as well as for the functionalization of the same substrate with two different species.

A (Bi,Sb) 2 Te 3 alloy powder was sintered via a pulse discharge sintering process followed by a rotary-die equal channel angular pressing (ECAP) process. It was found by x-ray diffraction analysis that the as-sintered material shows preferentially orientated microstructure, which were considerably eliminated by following ECAP processes. Generally, the Seebeck coefficient of the material was reduced by ECAP processing, which was attributed to the increased carrier concentration after the severe plastic deformation. Electrical conductivity increases after ECAP, which was also originated from the increased carrier concentration. The figure of merit of the material in different conditions shows higher value in the transverse direction. In the transverse samples, those after ECAP processing showed increased figures of merit, which reached 3.85 × 10 −3 /K in the material after 4 passes of ECAP.

Intermittent or serrated plastic flows have been widely observed in irreversible deformation through shear banding in bulk metallic glasses (BMGs). The strain-rate-dependent plasticity under uniaxial compression at 2 9 10 À3 , 2 9 10 À4 , and 2 9 10 À5 s À1 in a Zr-based BMG is investigated. Serration events have a typical time scale at a relatively higher strain rate (2 9 10 À3 s À1 ), while at lower strain rates, there is a lack of typical time scale. During serrations, the stress is falling rapidly, and the amplitude of the stress drop between the neighboring serrations is approximately equal. The stress drop vs time satisfies the exponential decay rule during jerk flows. Due to the serrated flow corresponding to the internal shear process, the freevolume model and stick-slip model are introduced to explain how the shear bands form and propagate and the cooperation of multiple shear bands. The mechanism is explained by relating the atomic-scale deformation with the macroscopic shear-band behavior, offering key ingredients to fundamentally cognize serrations in jerk flows.