Lapis Lazuli is one of the oldest precious stone, being used for glyptic as early as 7000 years ago: jewels, amulets, seals and inlays are examples of objects produced using this material. Only few sources of Lapis Lazuli exist in the world due to the low probability of geological conditions in which it can form, so that the possibility to associate the raw material to man-made objects helps to reconstruct trade routes. Since art objects produced using Lapis Lazuli are valuable, only nondestructive investigations can be carried out to identify the provenance of the raw materials. In the present work a systematic study of the luminescence properties of Lapis Lazuli under charged particles irradiation is reported. In a first phase a multi-technique approach was adopted (CL, SEM with microanalysis, micro-Raman) to characterise luminescent minerals. This characterisation was propaedeutic for IL/PIXE/PIGE measurements carried out on significant areas selected on the basis of results obtained previously. Criteria to identify provenance of Lapis Lazuli from four of the main sources (Afghanistan, Pamir Mountains in Tajikistan, Chile and Siberia) were proposed.

This work describes a tabletop (50 cm × 25 cm × 25 cm) full field X-ray pinhole camera (FF-XPC) presenting high energy- and high spatial-resolution. The FF-XPC consists of a conventional charge-coupled device (CCD) detector coupled, in a coaxial geometry, to a pinhole collimator of small diameter. The X-ray fluorescence (XRF) is induced on the samples with an external low-power X-ray tube. The use of the CCD as an energy dispersive X-ray detector was obtained by adopting a multi-image acquisition in single photon counting and by developing a processing algorithm to be applied in real-time to each of the acquired image-frames. This approach allowed the measurement of X-ray spectra with an energy resolution down to 133 eV at the reference value of 5.9 keV. The detection of the X-ray fluorescence through the pinhole-collimator allowed the two-dimensional elemental mapping of the irradiated samples. Two magnifications (M), determined by the relative sample-pinhole-CCD distances, are used in the present setup. A low value of M (equal to 0.35×) allows the macro-FF-XRF of large area samples (up to 4 × 4 cm(2)) with a spatial resolution down to 140 μm; a large magnification (M equal to 6×) is used for the micro-FF-XRF of small area samples (2.5 × 2.5 mm(2)) with a spatial resolution down to 30 μm.

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A fine control of the variation of the refractive index as a function of structural damage is essential in the fabrication of diamond-based optical and photonic devices. We report here about the variation of the real part of the refractive index at λ = 632.8 nm in high-quality single-crystal diamond damaged with 2 and 3 MeV protons at low-medium fluences (10 13 -10 17 ions cm). After implanting the samples in 125 × 125 μm 2 areas with a raster scanning ion microbeam, the variation of optical thickness of the implanted regions was measured with laser interferometric microscopy. The results were analyzed with a model based on the specific damage profile. The technique allows the direct fabrication of optical structures in bulk diamond based on the localized variation of the refractive index, which will be explored in future works.

We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.