Gait and waist motions always contain massive personnel information and it is feasible to extract these data via wearable electronics for identification and healthcare based on the Internet of Things (IoT). There also remains a demand to develop a cost‐effective human‐machine interface to enhance the immersion during the long‐term rehabilitation. Meanwhile, triboelectric nanogenerator (TENG) revealing its merits in both wearable electronics and IoT tends to be a possible solution. Herein, the authors present wearable TENG‐based devices for gait analysis and waist motion capture to enhance the intelligence and performance of the lower‐limb and waist rehabilitation. Four triboelectric sensors are equidistantly sewed onto a fabric belt to recognize the waist motion, enabling the real‐time robotic manipulation and virtual game for immersion‐enhanced waist training. The insole equipped with two TENG sensors is designed for walking status detection and a 98.4% identification accuracy for five different humans aiming at rehabilitation plan selection is achieved by leveraging machine learning technology to further analyze the signals. Through a lower‐limb rehabilitation robot, the authors demonstrate that the sensory system performs well in user recognition, motion monitoring, as well as robot and gaming‐aided training, showing its potential in IoT‐based smart healthcare applications.

high carrier mobility, and good air stability, it has the possibility to serve as the channel material of postsilicon era. Disappointingly, most existing 2D semiconductors cannot meet these requirements simultaneously, including the most concerned 2D MoS 2 and black phosphorene (BP). [8][9][10][11][12] Experimentally, 2D MoS 2 FETs have been scaled down to the sub-10 nm region, [13][14][15] but the low on-current (<250 µA µm −1 ) mainly caused by the low carrier mobility fails to meet the International Technology Roadmap for Semiconductors (ITRS) requirements, [16] which is in accord with the results of the ab initio quantum transport simulations. [17] 2D BP FETs own high carrier mobility but are so sensitive to the air that their device performance degenerates when exposed under ambient condition. [18,19] Therefore, it is crucial to find a 2D channel material with a modest band gap, large drive current, and high air stability to continue Moore's law.Tellurium (Te), a p-type semiconductor, consists of individual helical Te chains that are stacked together by van der Waals force. [20] Recently, atomically thin tellurene (2D form of Tellurium) has been fabricated by a substrate-free solution process and molecular beam epitaxy on a graphene/6H-SiC substrate, respectively. [21][22][23] 2D tellurene possesses an anisotropic structure and is constituted of alternate tetragonal and hexagonal rings. [24,25] The band gap of tellurene monotonically decreasesThe merging 2D semiconductor tellurene (2D Group-VI tellurium) is a possible channel candidate for post-silicon field-effect transistor (FETs) due to its high carrier mobility, high drive current, and excellent air stability. The performance limits of sub-5-nm ML tellurene metal-oxide-semiconductor FETs (MOSFETs) are explored by employing exact ab initio quantum transport simulations. An optimized p-type ML tellurene MOSFET meets both the high performance (along both the armchair and the zigzag directions) and the low power (along the armchair direction) requirements of the International Technology Roadmap for Semiconductors (ITRS) at a gate length of 4 nm with a negative capacity dielectric. Hence, choosing ML tellurene as the channel material provides a novel route to continue the Moore's law to 4 nm.

Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi2O2Se is attracting much attention as a potential channel candidate for the next‐generation field effect transistor (FETs). Although the fabricated bilayer (BL) and few layers Bi2O2Se FETs exhibit a large current on/off ratio (>106) and a near‐ideal subthreshold swing value (≈65 mV dec−1), the performance limit of ultrashort channel Bi2O2Se FET is obscure. Here the ballistic performance upper limit of the sub 10 nm BL Bi2O2Se metal‐oxide‐semiconductor FETs (MOSFETs) is simulated for the first time by using ab initio quantum transport simulations. The optimized BL Bi2O2Se n‐type MOSFETs can fulfill the high performance device requirements on the on‐state current, delay time, and power dissipation of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 5 nm. Therefore, Moore's law can be extended to 5 nm by taking BL Bi2O2Se as the channel.

Monolayer (ML) WS 2 is a promising material to be the channel of nanoscale field-effect transistors (FETs). In ML WS 2 FETs, the interfacial properties between ML WS 2 and electrodes significantly affect the device performance, due to the possible existence of Schottky barriers at the interface. In this paper, the electronic and transport properties of both the lateral and the vertical interfaces between ML WS 2 and six common metals is calculated (Sc, Ti, Ag, Cu, Au, and Pt) by the density functional theory and the quantum transport simulation. n-type Schottky contact exists with the lateral electron Schottky barrier height (SBH) of 0.28, 0.36, 0.25, 0.46, 1.00 eV for Sc, Ti, Ag, Cu, and Au electrode, respectively, while p-type Schottky contact exists with the lateral hole SBH of 0.98 eV for Pt electrode. The average pinning factor at the lateral interface obtained from linear fitting to the SBHs and the Schottky-Bardin model is 0.32 and 0.28, respectively, suggestive of a strong Fermi level pinning originating from the metal induced gap states. The work reveals the properties of the lateral interfaces between ML WS 2 channels and electrodes theoretically for the first time, providing an instruction to design ML WS 2 devices.