A resonant quantum magnetoelectric coupling effect has been demonstrated in the multiferroic metal-organic framework of [(CH3)2NH2]Fe(HCOO)3. This material shows a coexistence of a spin-canted antiferromagnetic order and ferroelectricity as well as clear magnetoelectric coupling below TN ≈ 19 K. In addition, a component of single-ion quantum magnets develops below ∼ 8 K because of an intrinsic magnetic phase separation. The stair-shaped magnetic hysteresis loop at 2 K signals resonant quantum tunneling of magnetization. Meanwhile, the magnetic field dependence of dielectric permittivity exhibits sharp peaks just at the critical tunneling fields, evidencing the occurrence of resonant quantum magnetoelectric coupling effect. This resonant effect enables a simple electrical detection of quantum tunneling of magnetization.

Multiferroics materials, which exhibit coupled magnetic and ferroelectric properties, have attracted tremendous research interest because of their potential in constructing next-generation multifunctional devices. The application of single-phase multiferroics is currently limited by their usually small magnetoelectric effects. Here, we report the realization of giant magnetoelectric effects in a Y-type hexaferrite Ba0.4Sr1.6Mg2Fe12O22 single crystal, which exhibits record-breaking direct and converse magnetoelectric coefficients and a large electric-field-reversed magnetization. We have uncovered the origin of the giant magnetoelectric effects by a systematic study in the Ba2-xSrxMg2Fe12O22 family with magnetization, ferroelectricity and neutron diffraction measurements. With the transverse spin cone symmetry restricted to be two-fold, the one-step sharp magnetization reversal is realized and giant magnetoelectric coefficients are achieved. Our study reveals that tuning magnetic symmetry is an effective route to enhance the magnetoelectric effects also in multiferroic hexaferrites.

Solid state electrochemical cells with synaptic functions have important applications in building smart-terminal networks. Here, the essential synaptic functions including potentiation and depression of synaptic weight, transition from short- to long-term plasticity, spike-rate-dependent plasticity, and spike-timing-dependent plasticity behavior were successfully realized in an Ag/MoO/fluorine-doped tin oxide (FTO) cell with continual resistance switching. The synaptic plasticity underlying these functions was controlled by tuning the excitatory post-synaptic current (EPSC) decay, which is determined by the applied voltage pulse number, width, frequency, and intervals between the pre- and post-spikes. The physical mechanism of the artificial synapse operation is attributed to the interfacial electrochemical reaction processes of the MoO films with the adsorbed water, where protons generated by water decomposition under an electric field diffused into the MoO films and intercalated into the lattice, leading to the short- and long-term retention of cell resistance, respectively. These results indicate the possibility of achieving advanced artificial synapses with solid state electrochemical cells and will contribute to the development of smart-terminal networking systems.