Plasmonics provides great promise for nanophotonic applications. However, the high optical losses inherent in metal-based plasmonic systems have limited progress. Thus, it is critical to identify alternative low-loss materials. One alternative is polar dielectrics that support surface phonon polariton (SPhP) modes, where the confinement of infrared light is aided by optical phonons. Using fabricated 6H-silicon carbide nanopillar antenna arrays, we report on the observation of subdiffraction, localized SPhP resonances. They exhibit a dipolar resonance transverse to the nanopillar axis and a monopolar resonance associated with the longitudinal axis dependent upon the SiC substrate. Both exhibit exceptionally narrow linewidths (7-24 cm(-1)), with quality factors of 40-135, which exceed the theoretical limit of plasmonic systems, with extreme subwavelength confinement of (λ(res)3/V(eff))1/3 = 50-200. Under certain conditions, the modes are Raman-active, enabling their study in the visible spectral range. These observations promise to reinvigorate research in SPhP phenomena and their use for nanophotonic applications.

Efforts to create reproducible surface-enhanced Raman scattering (SERS)-based chemical and biological sensors has been hindered by difficulties in fabricating large-area SERS-active substrates with a uniform, reproducible SERS response that still provides sufficient enhancement for easy detection. Here we report on periodic arrays of Au-capped, vertically aligned silicon nanopillars that are embedded in a Au plane upon a Si substrate. We illustrate that these arrays are ideal for use as SERS sensor templates, in that they provide large, uniform and reproducible average enhancement factors up to ∼1.2 × 10(8) over the structure surface area. We discuss the impact of the overall geometry of the structures upon the SERS response at 532, 633, and 785 nm incident laser wavelengths. Calculations of the electromagnetic field distributions and intensities within such structures were performed and both the wavelength dependence of the predicted SERS response and the field distribution within the nanopillar structure are discussed and support the experimental results we report.

Mie-resonances in vertical, small aspect-ratio and subwavelength silicon nanopillars are investigated using visible bright-field µ-reflection measurements and Raman scattering. Pillar-to-pillar interactions were examined by comparing randomly to periodically arranged arrays with systematic variations in nanopillar diameter and array pitch. First- and second-order Mie resonances are observed in reflectance spectra as pronounced dips with minimum reflectances of several percent, suggesting an alternative approach to fabricating a perfect absorber. The resonant wavelengths shift approximately linearly with nanopillar diameter, which enables a simple empirical description of the resonance condition. In addition, resonances are also significantly affected by array density, with an overall oscillating blue shift as the pitch is reduced. Finite-element method and finite-difference time-domain simulations agree closely with experimental results and provide valuable insight into the nature of the dielectric resonance modes, including a surprisingly small influence of the substrate on resonance wavelength. To probe local fields within the Si nanopillars, µ-Raman scattering measurements were also conducted that confirm enhanced optical fields in the pillars when excited on-resonance.

We report the development of an imaging layer technology for 50 kV electron-beam lithography based upon the displacement of noncovalently bound amine ligands from a siloxane host film. The patterned films were used as templates for the selective deposition of an electroless nickel film resulting in a positive tone imaging mechanism. The deposited nickel was sufficiently robust to function as an etch mask for pattern transfer by reactive ion etching. Metallized and etched patterns with linewidths to approximately 40 nm are demonstrated using an exposure dose of 500 μC/cm2.

Self-assembled films of octadecyltrichlorosilane (OTS) on Si/SiO2 were patterned with proximity X-rays (λ ) 1.0 nm) in air, resulting in the incorporation of oxygen-containing functional groups, that is, hydroxyl and aldehyde, into the film. Unexposed and exposed OTS exhibited sufficient chemical contrast for patterning processes based on differences in wetting behavior and chemical reactivity. Latent images of features as small as ∼70 nm, defined by the X-ray mask, were successfully fabricated in the OTS with high fidelity over areas of ∼1 cm 2 . Patterned OTS was imaged directly with lateral force microscopy and indirectly through atomic force microscopy of three-dimensional structures formed on the surface of thin films of diblock copolymers after deposition and annealing on the patterned OTS. Pattern transfer of features with dimensions as small as ∼150 nm into the underlying silicon substrate was achieved by reactive ion etching using thin films of nickel selectively deposited onto the exposed areas of the OTS as etch masks.