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The optical energy gap of Ge1−xSnx alloys has been determined from transmittance measurements, using a fast-Fourier-transform infrared interferometer. Our results show that the change from indirect to direct band gap occurs at a lower critical Sn concentration (xc) than the value predicted from the virtual crystal approximation, tight binding, and pseudopotential models. However, a close agreement between the experimental results and the predictions with deformation potential theory is observed. The concentration xc, which is theoretically expected to be 0.09, actually it is observed to lie between 0.10<xc<0.13.

In this work, films of horizontally aligned single-walled carbon nanotubes were thermally and electrically characterized in order to determine the bolometric performance. An average thermal time constant of τ = 420 μs along with a temperature coefficient of resistance of TCR = -2.94% K(-1) were obtained. The maximum voltage responsivity and detectivity obtained were R(V) =230 V/W and D* = 1.22 × 10(8) cm Hz(1/2)/W, respectively. These values are higher than the maximum voltage responsivity (150 V/W) and maximum temperature coefficient of resistance (1.0% K(-1)) previously reported for carbon nanotube films at room temperature. The maximum detectivity was obtained at a frequency of operation of 1.25 kHz.