Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mgdoped InN J. Appl. Phys. 113, 013502 (2013) Nanomechanical and optical properties of highly a-axis oriented AlN films Appl. Phys. Lett. 101, 254102 (2012) 2.8μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers Appl.

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In the paper a combined experimental and theoretical investigation of the longitudinal optical phonon sidebands (PSBs) in the luminescence of free excitons in GaN at moderately high temperatures was reported. The spectral features, including line broadening, shift, and asymmetry of the one- and two-phonon PSBs, were revealed both experimentally and theoretically. It is found that the linewidth of the one-phonon PSB is surprisingly always larger than that of the two-phonon PSB in the interested temperature range. Moreover, the thermal broadening rates of the one- and two-phonon PSBs are considerably different. We adopted the Segall-Mahan theory [B. Segall and G. D. Mahan, Phys. Rev. 171, 935 (1968)] to compute the PSB spectra of the free excitons in GaN. Only one adjustable parameter, the effective mass of the holes, was used in the calculations. For the one-phonon PSB, an excellent agreement between theory and experiment is achieved when an adequate effective mass of the holes was used.

Si-doped GaN films grown on sapphire are investigated by infrared reflectance. A damping behavior of the interference fringes is observed, and interpreted to be due to the presence of an interface layer between the film and the substrate. A theoretical calculation using a two-layer model to take into account the interface layer resulted in this damping in agreement with the experiment. The damping behavior and an improvement of interface properties by Si incorporation are demonstrated.