Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).
Using density functional theory and guided by extensive scanning tunneling microscopy (STM) image data, we formulate a detailed mechanism for the dissociation of phosphine (PH3) molecules on the Si(001) surface at room temperature. We distinguish between a main sequence of dissociation that involves PH2+H, PH+2H, and P+3H as observable intermediates, and a secondary sequence that gives rise to PH+H, P+2H, and isolated phosphorus adatoms. The latter sequence arises because PH2 fragments are surprisingly mobile on Si(001) and can diffuse away from the third hydrogen atom that makes up the PH3 stoichiometry. Our calculated activation energies describe the competition between diffusion and dissociation pathways and hence provide a comprehensive model for the numerous adsorbate species observed in STM experiments.
We report a comprehensive ab initio survey of possible dissociation intermediates of phosphine ͑PH 3 ͒ on the Si͑001͒ surface. We assign three scanning tunneling microscopy ͑STM͒ features, commonly observed in room-temperature dosing experiments, to PH 2 + H, PH+ 2H, and P + 3H species, respectively, on the basis of calculated energetics and STM simulation. These assignments and a time series of STM images which shows these three STM features converting into another, allow us to outline a mechanism for the complete dissociation of phosphine on the Si͑001͒ surface. This mechanism closes an important gap in the understanding of the doping process of semiconductor devices.
The attachment of organic molecules
to semiconductor surfaces and
their measurement using scanning tunneling microscopy and spectroscopy
(STM/STS) is considered to be a potential route toward conductance
measurements of single molecules with known structural and electronic
configuration. Here, we investigate a model systemacetophenone
on Si(001)and demonstrate that this adsorbate can be manipulated
using the STM such that it adopts a configuration where it stands
upright with a free-standing phenyl ring and strong Si–O linkage
to the substrate. For the structural identification we combine STM
imaging with density functional theory (DFT) calculations to describe
the adsorbate structures that were observed in our experiments and
the reaction pathways that link them; of these the upright configuration
is the most thermodynamically stable. The chemical structure of the
upright configuration suggests that π-conjugation within the
adsorbate extends to the silicon surface resulting in strong hybridization
of the molecular states with the substrate. This is supported by the
absence of any significant features in STS curves recorded over the
adsorbate. The structure of this adsorbate and its robust attachment
to silicon makes it attractive for future STM/semiconductor-based
molecular conductance measurements.
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